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Bulletin of Materials Science

, 41:149 | Cite as

Resistance-switching properties of Bi-doped \(\hbox {SrTiO}_{3}\) films for non-volatile memory applications with different device structures

  • Hua WangEmail author
  • Wenbo Zhang
  • Jiwen Xu
  • Guobao Liu
  • Hang Xie
  • Ling Yang
Article
  • 41 Downloads

Abstract

\(\hbox {SrTiO}_{3}\) and Bi-doped \(\hbox {SrTiO}_{3}\) films were fabricated with different device structures using the sol–gel method for non-volatile memory applications, and their resistance-switching behaviour, endurance and retention characteristics were investigated. \(\hbox {SrTiO}_{3}\) and \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt have the same phase structure, morphologies and grain size; however, the grain size of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si is slightly larger than those of the \(\hbox {SrTiO}_{3}\) films grown on Si and the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Pt. The \(\hbox {SrTiO}_{3}\) or \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt all exhibit bipolar resistive-switching behaviour and follow the same conductive mechanism; however, the \(\hbox {Ag}/\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}/\hbox {Si}\) device possesses the highest \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of \(10^{5}\) and the best endurance and retention characteristics. The doping of Bi is conducive to enhance the \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of the \(\hbox {SrTiO}_{3}\) films; meanwhile, the Si substrates help improve the endurance and retention characteristics of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films.

Keywords

\(\hbox {SrTiO}_{3}\) Bi doping resistance-switching properties device structure sol–gel 

Notes

Acknowledgements

This work was financially supported by the Guangxi Natural Science Foundation, China (Grant No. 2015GXNSFAA139253).

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Copyright information

© Indian Academy of Sciences 2018

Authors and Affiliations

  • Hua Wang
    • 1
    Email author
  • Wenbo Zhang
    • 1
  • Jiwen Xu
    • 1
  • Guobao Liu
    • 1
  • Hang Xie
    • 1
  • Ling Yang
    • 1
  1. 1.School of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilinPeople’s Republic of China

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