Korean Journal of Chemical Engineering

, Volume 31, Issue 4, pp 639–643 | Cite as

Synthesis and characterization of Co and Mn doped NiO nanoparticles

  • Kaliyan Vallalperuman
  • Mathivanan Parthibavarman
  • Sekar Sathishkumar
  • Manickam Durairaj
  • Kuppusamy Thavamani
Environmental Engineering

Abstract

Diluted magnetic semiconductors (DMS) are intensively studied for their potential spintronics applications, especially those with Curie temperature above the room temperature. Ni1−x Mn x O and Ni1−x Co x O (x=1% & 2%), nanoparticles with size around 40–50 nm, were prepared by co-precipitation method. An NiO single phase structure was confirmed by powder X-ray diffraction measurements. Also, diffraction peaks show a systematic shift towards higher angle with an increase in Mn concentration, which is associated with the lattice variation. The samples were pelleted and examined for its magnetic property using a vibrating sample magnetometer (VSM); it indicates paramagnetic-like behavior at room temperature. The increase in a.c conductivity with increasing temperature is attributed to the increase in drift mobility of the charge carriers.

Keywords

Diluted Magnetic Semiconductors Nanocrystalline Crystal Structure Vibrating Sample Magnetometer 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    R. Aruna, P. Kalaivanan and K. Gnanasekar, Super Lattices and Microstructures, 52, 1020 (2012).CrossRefGoogle Scholar
  2. 2.
    M. K. Li, S. J. Lee, S. U. Yuldashev, G. Ihm and T.W. Kang, J. Magn. Magn. Mater., 323, 2639 (2011).CrossRefGoogle Scholar
  3. 3.
    S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. Molnar, M. L. Roukes, A.Y. Chtchelkanova and D. M. Treger, Science, 294, 1488 (2001).CrossRefGoogle Scholar
  4. 4.
    Y. Kobayashi, J. Ishida, I. Hwang, T. Mizokawa, A. Fujimori, K. Mamiya, J. Okamoto, Y. Takeda, T. Okane, Y. Saitoh, Y. Muramatsu, A. Tanaka, H. Saeki, H. Tabata and T. Kawai, Phys. Rev. B, 72, 201201 (2005).CrossRefGoogle Scholar
  5. 5.
    A. Kurokawa, N. Sakai, L. Zhu, H. Takeuchi, S. Yano, T. Yanoh, K. Onuma, T. Kondo, K. Miike, T. Miyasaka and Y. Ichiyanagi, J. Korean Phys. Society, 63, 716 (2013).CrossRefGoogle Scholar
  6. 6.
    S. B. Ogale, R. J. Choudhary, J. P. Buban, S. E. Lofland, S. R. Shinde, S. N. Kale, V. N. Kulkarni, J. Higgins, C. Lanci, J.R. Simpson, N.D. Browning, S. Das Sarma, H. D. Drew Greene and T. Venkatesan, Phys. Rev. Lett., 91, 077205 (2003).CrossRefGoogle Scholar
  7. 7.
    J. Philip, A. Punnoose, B. I. Kim, K. M. Reddy, S. Layne, J. O. Holmes, B. Satpati, P. R. Leclair, T. S. Santos and J. S. Moodera, Nat. Mater., 5, 298 (2006).CrossRefGoogle Scholar
  8. 8.
    W. Prellier, A. Fouchet and B. Mercey, J. Phys.: Condens. Matter, 15, R1583 (2003).Google Scholar
  9. 9.
    M. Venkatesan, C.B. Fitzgerald and J.M.D. Coey, Nature London, 430, 630 (2004).CrossRefGoogle Scholar
  10. 10.
    A. Dana Schwartz and R. Daniel, Adv. Mater., 16, 2115 (2004).CrossRefGoogle Scholar
  11. 11.
    K. Sato and H. K. Yoshida, Semi Cond. Sci. Technol., 17, 367 (2000).CrossRefGoogle Scholar
  12. 12.
    T. Dietl, H. Ohno, F. Matsukura, J. Cibert and D. Ferrand, Science, 287, 1019 (2000).CrossRefGoogle Scholar
  13. 13.
    R. A. Winston and J. F. Cordaro, J. Appl. Phys., 68, 6495 (1990).CrossRefGoogle Scholar
  14. 14.
    S. B. Zhang, S. H. Wei and A. Zunger, Phys. Rev. B, 63, 075205 (2001).CrossRefGoogle Scholar
  15. 15.
    S. Mohanty and S. Ravi, Solid State Communications, 150, 1570 (2010).CrossRefGoogle Scholar
  16. 16.
    Y. Kalyana Lakshmi, K. Srinivas, B. Sreedhar, M. Manivel Raja, M. Vithal and P. Venugopal Reddy, Mater. Chem. Phys., 113, 749 (2009).CrossRefGoogle Scholar
  17. 17.
    B. D. Cullity, Elements of X-ray diffraction, Addison-Wesley, Reading, MA, 98 (1956).Google Scholar
  18. 18.
    S. Kolesnik, B. Dabrowski and J. Mais, J. Appl. Phys., 95, 2582 (2005).CrossRefGoogle Scholar
  19. 19.
    A. Tiwari, C. Jin, A. Kwit, D. Kumar, J. F. Muth and J. Narayan, Solid State Commun., 121, 371 (2002).CrossRefGoogle Scholar
  20. 20.
    X.M. Cheng and C. L. Chien, J. Appl. Phys., 93, 7876 (2003).CrossRefGoogle Scholar
  21. 21.
    C. N. R. Rao and F. L. Deepak, J. Mater. Chem., 15, 573 (2005).CrossRefGoogle Scholar
  22. 22.
    D. Paul Joseph, G. Senthilkumar and C. Venkateswaran, Mater. Lett., 59, 2720 (2005).CrossRefGoogle Scholar
  23. 23.
    S. A. Makhlouf, F. T. Parker, F. E. Spada and A. E. Berkowitz, J. Appl. Phys., 81, 5561 (1997).CrossRefGoogle Scholar
  24. 24.
    S. Philip Raja, D. Paul Joseph and C. Venkateswaran, Mater. Chem. Phys., 113, 67 (2009).CrossRefGoogle Scholar
  25. 25.
    S. S. Nkosia, B. Yalisia, D. E. Motaung, J. Keartland, E. Sideras-Haddad, A. Forbes and B.W. Mwakikunga, Appl. Surface Sci., 265, 860 (2013).CrossRefGoogle Scholar
  26. 26.
    D. P. Almond and A. R. West, Solid State Ionics, 9–10, 277 (1983).CrossRefGoogle Scholar

Copyright information

© Korean Institute of Chemical Engineers, Seoul, Korea 2013

Authors and Affiliations

  • Kaliyan Vallalperuman
    • 1
  • Mathivanan Parthibavarman
    • 1
  • Sekar Sathishkumar
    • 1
  • Manickam Durairaj
    • 1
  • Kuppusamy Thavamani
    • 2
  1. 1.Department of PhysicsMahendra Engineering CollegeTiruchengodeIndia
  2. 2.Department of PhysicsAVS Technical CampusSalemIndia

Personalised recommendations