Korean Journal of Chemical Engineering

, Volume 26, Issue 4, pp 1034–1039 | Cite as

Electrochemical characteristics of amophous carbon coated silicon electrodes

  • Oleg Mikhalovich Vovk
  • Byung-Ki Na
  • Byung Won Cho
  • Joong Kee Lee
Article

Abstract

The properties of carbon films deposited by the radio frequency plasma sputtering of a fullerene C60 target were investigated to elucidate the dependence on the plasma power. A radio frequency argon plasma power ranging from 50 to 300W at a pressure of 1.3 Pa was applied for sputtering. This corresponds to a self-bias potential on the target ranging from −95 to −250 V and a maximum argon ion energy ranging from 240 to 575 eV. The analysis of the G and D peaks in the Raman spectra shows that the films are similar to tetragonal hydrogenated amorphous carbon annealed at 600–1,000 °C. The electron band structure of the carbon films deposited by the sputtering of C60 depends on the plasma power. The coating effect of these carbon films on the capacity performance of the silicon film electrode of lithium secondary batteries was significant in our experimental range. An electrochemical test revealed that such carbon thin film on the silicon electrode plays an important role in mitigating the capacity fading during the charge and discharge processes. The test revealed that the film formed at a plasma power of 300 W is the most effective.

Key words

Fullerene C60 Carbon Film r.f. Plasma Sputtering UV-Vis Spectra Raman Spectra Anode of Lithium Secondary Batteries 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Y. Ohzawa, Y. Yamanaka, K. Naga and T. Nakajima, J. Power Sources, 146, 125 (2005).CrossRefGoogle Scholar
  2. 2.
    H.-T. Shim, D. Byun and J. K. Lee, Prepr. Pap.-Am. Chem. Soc. Div. Fuel Chem., 51, 195 (2006).Google Scholar
  3. 3.
    T. Zheng and J. R. Dahn, J. Power Sources, 68, 201 (1997).CrossRefGoogle Scholar
  4. 4.
    V. E. Pukha, A. N. Stetsenko, S. N. Dub and J. K. Lee, J. Nanosci. Nanotechnol., 7, 1370 (2007).CrossRefGoogle Scholar
  5. 5.
    D. H. Lowndes, D. B. Geohegan, A. A. Puretzky, D. P. Norton and C. M. Rouleau, Science, 273, 898 (1996).CrossRefGoogle Scholar
  6. 6.
    V. A. Dudkin, V. E. Pukha, A. S. Vus, A. N. Stetsenko, B. A. Savitsky and O. M. Vovk, Vacuum, 68, 251 (2003).CrossRefGoogle Scholar
  7. 7.
    K. Miyauchi, T. Kitagawa, N. Toyoda, S. Matsui, K. Mochiji, T. Mitamura and I. Yamada, Nuclear Instru. Methods in Phys. Res. B, 206, 893 (2003).CrossRefGoogle Scholar
  8. 8.
    H. Huck, E. B. Halac, M. Reinoso, A. G. Dall’Asén, A. Somoza and W. Deng, Appl. Surf. Sci., 211, 379 (2003).CrossRefGoogle Scholar
  9. 9.
    E. B. Maiken and P. Taborek, J. Appl. Phys., 87, 423 (2000).CrossRefGoogle Scholar
  10. 10.
    D. L. Baptista and F. C. Zawislak, Diamond & Related Materials, 13, 1791 (2004).CrossRefGoogle Scholar
  11. 11.
    J.O. Song, H.-T. Shim, D. Byun and J. K. Lee, J. Solid State Phenomena, 124–126, 1063 (2007).CrossRefGoogle Scholar
  12. 12.
    I. P. Soshnikov, A.V. Lunev, M. E. Gaevski, L.G. Rotkina and V. T. Barchenko, Tech. Phys., 45, 766 (2000).CrossRefGoogle Scholar
  13. 13.
    J. C. Tauc. Optical properties of solids, North-Holland, Amsterdam (1972).Google Scholar
  14. 14.
    A. C. Ferrari, J. Robertson, Phys. Rev. B, 61, 14095 (2000).CrossRefGoogle Scholar
  15. 15.
    A. C. Ferrari, J. Robertson, Phys. Rev. B, 64, 75414 (2001).CrossRefGoogle Scholar

Copyright information

© Korean Institute of Chemical Engineers, Seoul, Korea 2009

Authors and Affiliations

  • Oleg Mikhalovich Vovk
    • 2
  • Byung-Ki Na
    • 3
  • Byung Won Cho
    • 1
  • Joong Kee Lee
    • 1
  1. 1.Advanced Energy Materials processing laboratory, Battery Research CenterKorea Institute of Science and TechnologyCheongnyang, SeoulKorea
  2. 2.Institute for Single CrystalsNational Academy of Sciences of UkraineKharkivUkraine
  3. 3.Department of Chemical EngineeringChungbuk National UniversityChungbukKorea

Personalised recommendations