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Optoelectronics Letters

, Volume 15, Issue 6, pp 428–434 | Cite as

Effect of MoSe2 on the performance of CIGS solar cells

  • Hao-yu Sun (孙昊昱)
  • Peng-hai Li (李鹏海)
  • Yu-ming Xue (薛玉明)Email author
  • Zai-xiang Qiao (乔在祥)
  • Liu Sai (刘赛)
Article
  • 16 Downloads

Abstract

A CuIn1-xGaxSe2 (CIGS) thin film solar cell model with MoSe2 transition layer was established, using SCAPS-1D software. The influence of MoSe2 interface layer formed between absorption layer CIGS and the back contact Mo on the solar cell performance was investigated. By changing the doping concentration, thickness and bandgap of MoSe2 layer, it is found that the MoSe2 and the variation of parameters have a significant effect on the electrical characteristics and photovoltaic parameters of CIGS thin film solar cells. Based on the energy band, the interfaces of Mo/MoSe2 and MoSe2/CIGS are analyzed. It is considered that Mo/MoSe2 is a Schottky contact, MoSe2/CIGS is an ohmic contact. When suitable parameters of MoSe2 layer are formed into the interface, it will provide a new path for designing CIGS solar cells with thinner absorption layer.

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Copyright information

© Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Hao-yu Sun (孙昊昱)
    • 1
  • Peng-hai Li (李鹏海)
    • 1
  • Yu-ming Xue (薛玉明)
    • 1
    Email author
  • Zai-xiang Qiao (乔在祥)
    • 2
  • Liu Sai (刘赛)
    • 1
  1. 1.College of Electrical and Electronic EngineeringTianjin University of TechnologyTianjinChina
  2. 2.College of Physics and Materials ScienceTianjin Normal UniversityTianjinChina

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