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Optoelectronics Letters

, Volume 15, Issue 2, pp 89–92 | Cite as

Effects of dispersion, absorption and interface fluctuation on the reflection spectra of porous silicon microcavity devices

  • Chun-cai Li (李春才)
  • Zhen-hong Jia (賈振紅)Email author
  • Lei He (何磊)
  • Xiao-hui Huang (黄晓辉)
Article
  • 15 Downloads

Abstract

One problem associated with microcavity devices is the significant difference between the reflection spectra of fabricated porous silicon microcavity (PSM) devices and those obtained by theoretical calculation of ideal microcavity devices. To address this problem, studies were carried out to determine the effects of the refractive index dispersion, the absorption of the porous silicon layer and the fluctuation of the dielectric interface on the reflection spectra of PSM devices. The results are in good agreement with those obtained experimentally from the fabricated PSM devices, which provides a theoretical basis for the design of PSM sensors.

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Copyright information

© Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Chun-cai Li (李春才)
    • 1
  • Zhen-hong Jia (賈振紅)
    • 2
    Email author
  • Lei He (何磊)
    • 1
  • Xiao-hui Huang (黄晓辉)
    • 2
  1. 1.School of Physical Science and TechnologyXinjiang UniversityUrumqiChina
  2. 2.School of Information Science and EngineeringXinjiang UniversityUrumqiChina

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