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Optoelectronics Letters

, Volume 15, Issue 2, pp 113–116 | Cite as

Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design

  • Hong-liang Lin (林鸿亮)
  • Xiang-hua Zeng (曾祥华)Email author
  • Shi-man Shi (石时曼)
  • Hai-jun Tian (田海军)
  • Mo Yang (杨默)
  • Kai-ming Chu (储开明)
  • Kai Yang (杨凯)
  • Quan-su Li (李全素)
Article
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Abstract

Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition (MOCVD) with different doping concentrations and Al contents in AlxGa1-x As compound. And their optoelectric properties show that the optimal design for tunneling region corresponds to P++ layer with hole concentration up to 1×1020 cm−3, N++ layer electron concentration up to 5×1019 cm−3 and constituent Al0.2Ga0.8As in the tunneling junction region. The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction (12 mW). Furthermore, the optimized device keeps the same spectral characteristics without introducing excessive voltage droop.

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Copyright information

© Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Hong-liang Lin (林鸿亮)
    • 1
    • 2
  • Xiang-hua Zeng (曾祥华)
    • 1
    Email author
  • Shi-man Shi (石时曼)
    • 2
  • Hai-jun Tian (田海军)
    • 2
  • Mo Yang (杨默)
    • 2
  • Kai-ming Chu (储开明)
    • 2
  • Kai Yang (杨凯)
    • 2
  • Quan-su Li (李全素)
    • 2
  1. 1.College of Physics Science and Technology & Institute of Optoelectronic TechnologyYangzhou UniversityYangzhouChina
  2. 2.Yangzhou Change Light Optoelectronic Co., Ltd.YangzhouChina

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