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Optoelectronics Letters

, Volume 15, Issue 2, pp 104–107 | Cite as

Optical properties of an Er3+-doped phosphate glass waveguide formed by single-energy H+ ion implantation

  • Jing-yi Chen (陈静怡)
  • Sen Yan (严森)
  • Rui-lin Zheng (郑锐林)
  • Liao-lin Zhang (张料林)
  • Hai-tao Guo (郭海涛)
  • Chun-xiao Liu (刘春晓)Email author
Article
  • 2 Downloads

Abstract

In this work, we report the fabrication of an optical waveguide by single-energy H+ ion implantation in the Er3+-doped phosphate glass. The ion implantation conditions are with energy of 0.4 MeV and a fluence of 8.0×1016 ions/cm2. The dark mode spectrum of the waveguide structure was measured by the prism coupling experiment. The refractive index change along with the penetration depth was fitted by using the reflectivity calculation method (RCM). Finally, the calculated near-field light intensity distribution shows superior waveguide properties, which demonstrates its promising potentials for compact optical integrated devices.

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Copyright information

© Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Jing-yi Chen (陈静怡)
    • 1
  • Sen Yan (严森)
    • 1
  • Rui-lin Zheng (郑锐林)
    • 1
  • Liao-lin Zhang (张料林)
    • 2
  • Hai-tao Guo (郭海涛)
    • 3
  • Chun-xiao Liu (刘春晓)
    • 1
    Email author
  1. 1.College of Electronic and Optical EngineeringNanjing University of Posts and TelecommunicationsNanjingChina
  2. 2.School of Material Science and EngineeringJiangxi University of Science and TechnologyGanzhouChina
  3. 3.State Key Laboratory of Transient Optics and Photonics, Xi′an Institute of Optics and Precision MechanicsChinese Academy of SciencesXi′anChina

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