Advertisement

Optoelectronics Letters

, Volume 14, Issue 5, pp 342–345 | Cite as

1 550 nm long-wavelength vertical-cavity surface emitting lasers

  • Li-Jie Liu (刘丽杰)
  • Yuan-Da Wu (吴远大)
  • Yue Wang (王玥)
  • Jun-Ming An (安俊明)
  • Xiong-Wei Hu (胡雄伟)
Article
  • 4 Downloads

Abstract

A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabricated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn(1−xy)As/InP, and 6 strain compensated AlxGayIn(1−xy)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricating 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW operation at room temperature.

Document code

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    M. Xun, Ch. Xu, Y Y. Xie, G Q. Jiang, J. Wang, K. Xu and H D. Chen, Optics Letters 40, 12349 (2015).CrossRefGoogle Scholar
  2. [2]
    H Y. Qiu, Zh M. Wu, T. Deng, Y. He and G Q. X, Chinese Optics Letters 14, 021401 (2016).ADSCrossRefGoogle Scholar
  3. [3]
    Su Y M, Yu L J, Guo X, Zhang X, Liu J G and Zhu N H, Journal of Semiconductors 38, 9 (2017).Google Scholar
  4. [4]
    M K. Li, L J. Yuan, H Y. Yu, Q. Kan, Sh Y. Li, J P. Mi and J Q. Pan, Journal of Semiconductors 37, 034007 (2016).CrossRefGoogle Scholar
  5. [5]
    M C Y. Huang, Y. Zhou and C. Chang-Hasnain, Nature Photonics 1, 119 (2007).ADSCrossRefGoogle Scholar
  6. [6]
    H Y. Kao, C T. Tsai, C Y. Pong, Sh F. Liang, Z K. Weng, Y Ch. Chi, H Ch. Kuo, J J. Huang, T Ch. Lee, Ti T Shih, J J. Jou, W H. Cheng, Ch-H Wu and G R. Lin, Few-Mode 850nm VCSEL Chip with Direct 16-QAM OFDM Encoding at 80-Gbit/s for 100-m OM4 MMF Link, Optical Fiber Communications Conference, Th2A.38 (2017).Google Scholar
  7. [7]
    H. Soda, K. Iga, C. Kitahara and Y. Suematsu, Japanese Journal of Applied Physics 18, 2329 (1979).ADSCrossRefGoogle Scholar
  8. [8]
    W. Hofmann, M. Müller, A. Nadtochiy, Ch. Meltzer, A. Mutig, G. Bohm, J. Rosskofk, D. Bimberg, M Ch. Amann and C. Chang-Hasnain, Optics Express 17, 17547 (2009).ADSCrossRefGoogle Scholar
  9. [9]
    C. Chase, Y. Rao, W. Hofmann and C J. Chang-Hasnain, Optics Express 18, 15461 (2010).ADSCrossRefGoogle Scholar
  10. [10]
    M C. Amann and W. Hofmann, IEEE Journal of Selected Topics in Quantum Electronics 15, 861 (2009).ADSCrossRefGoogle Scholar
  11. [11]
    M. Ortsiefer, R. Shau, F. Mederer, R. Michalzik, J. Rosskopf, G. Bohm, F. Kohler, C. Lauer, M. Maute and M.-C. Amann, Electronics Letters 38, 1180 (2002).CrossRefGoogle Scholar
  12. [12]
    L. Chrostowski, B. Faraji, W. Hofmann, M Ch. Amann, S. Wieczorek and W W. Chow, IEEE Journal of Selected Topics in Quantum Electronics 13, 1200 (2007).ADSCrossRefGoogle Scholar
  13. [13]
    Y. Huang, X. Zhang and J. Zhang, IEEE Photonics Journal 9, 4 (2017).Google Scholar
  14. [14]
    H. Yu, S. Yao and G. Zhou, Optical & Quantum Electronics 50, 4 (2018).CrossRefGoogle Scholar
  15. [15]
    Y. Feng, P. Liu and D. Feng, High-speed Oxidation-confined 850nm VCSELs, IEEE International Conference on Optoelectronics and Microelectronics, 389 (2016).Google Scholar
  16. [16]
    T. Fang, B. Cui and S. Hao, Journal of Semiconductors 39, 2 (2018).Google Scholar
  17. [17]
    J. Wen, Y M. Wen, P. Li and S Sh. W, Journal of Semiconductors 37, 064010 (2016).CrossRefGoogle Scholar
  18. [18]
    M. Born and E. Wolf, Principles of Optics, 6th edn, Pergamon Press, Oxford, 1989.Google Scholar
  19. [19]
    Dan Y, Levi M and Karni Y, Facet Engineering of High Power Single Emitters, Proceedings of SPIE - The International Society for Optical Engineering, 7918 (2011).Google Scholar

Copyright information

© Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Li-Jie Liu (刘丽杰)
    • 1
    • 2
  • Yuan-Da Wu (吴远大)
    • 1
    • 2
  • Yue Wang (王玥)
    • 1
  • Jun-Ming An (安俊明)
    • 1
    • 2
  • Xiong-Wei Hu (胡雄伟)
    • 1
  1. 1.State Key Laboratory of Integrated Optoelectronics, Institute of SemiconductorsChinese Academy of SciencesBeijingChina
  2. 2.College of Material Science and Optoelectronic TechnologyUniversity of Chinese Academy of SciencesBeijingChina

Personalised recommendations