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Optoelectronics Letters

, Volume 13, Issue 4, pp 241–244 | Cite as

Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

  • Kai-li Li (李凯丽)
  • Jia-shun Zhang (张家顺)Email author
  • Jun-ming An (安俊明)
  • Jian-guang Li (李建光)
  • Liang-liang Wang (王亮亮)
  • Yue Wang (王玥)
  • Yuan-da Wu (吴远大)
  • Xiao-jie Yin (尹小杰)
  • Xiong-wei Hu (胡雄伟)
Article

Abstract

A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of −13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon- on-insulator (SOI) substrate.

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Copyright information

© Tianjin University of Technology and Springer-Verlag GmbH Germany 2017

Authors and Affiliations

  • Kai-li Li (李凯丽)
    • 1
    • 2
  • Jia-shun Zhang (张家顺)
    • 1
    Email author
  • Jun-ming An (安俊明)
    • 1
    • 2
  • Jian-guang Li (李建光)
    • 1
  • Liang-liang Wang (王亮亮)
    • 1
  • Yue Wang (王玥)
    • 1
  • Yuan-da Wu (吴远大)
    • 1
    • 2
  • Xiao-jie Yin (尹小杰)
    • 1
  • Xiong-wei Hu (胡雄伟)
    • 1
  1. 1.State Key Laboratory on Integrated Optoelectronics, Institute of SemiconductorsChinese Academy of SciencesBeijingChina
  2. 2.College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijingChina

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