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Optoelectronics Letters

, Volume 6, Issue 1, pp 15–17 | Cite as

Design and fabrication of Si LED with the N-well-P+ junction based on standard CMOS technology

  • Guang-hua Yang (杨广华)Email author
  • Lu-hong Mao (毛陆虹)
  • Chun-hong Huang (黄春红)
  • Wei Wang (王伟)
  • Wei-lian Guo (郭维康)
Article

Abstract

A wedge shape Si LED is designed and fabricated with 0.35 μm double-grating standard CMOS technology. The device structure is based on the N-well-P+ junction. The P+ has a wedge shape and is surrounded by the N-well. The micrographs of Si LEDs’ emitting and layout are captured. The I–V characteristic and spectra of the Si LED are tested. Under room temperature and backward bias, its radiant luminosity is 12 nW at 100 mA, and the wavelength of the emitting peak is located at 764 nm.

Keywords

Breakdown Voltage Space Charge Region Light Power Very Large Scale Integrate Wedge Shape 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  • Guang-hua Yang (杨广华)
    • 1
    • 2
    Email author
  • Lu-hong Mao (毛陆虹)
    • 1
  • Chun-hong Huang (黄春红)
    • 2
  • Wei Wang (王伟)
    • 3
  • Wei-lian Guo (郭维康)
    • 1
  1. 1.School of Electronic and Information EngineeringTianjin UniversityTianjinChina
  2. 2.Institute of Information and CommunicationTianjin Polytechnic UniversityTianjinChina
  3. 3.Institute of SemiconductorsChinese Academy of ScienceBeijingChina

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