Optoelectronics Letters

, Volume 5, Issue 5, pp 337–340 | Cite as

Optimization of electrode shape for high power GaN-based light-emitting diodes

  • Yu-pei Fan (范玉佩)
  • Li-wen Cheng (程立文)
  • Yue-ming Lin (林岳明)
  • Jun-bing Zhang (张俊兵)
  • Xiang-hua Zeng (曾祥华)


Because the polarization effect influences the distribution of the carriers in the multiple quantum wells of the light-emitting diodes (LEDs), the light-emitting efficiency is also affected. The influence of the polarization effect on GaN-based LEDs’ performance is simulated. By simulating four different types of electrode shapes, it’s found that the electrode shape influences not only the photoelectric characteristics but also the optical absorption by the semiconductor. Through the optimization of the electrode shape, the I–V characteristic is improved, and the series resistance is lowered. The optical absorption by the semiconductor is decreased and then the heat generated in the LEDs is lowered. As a result, both the photoelectric conversion efficiency and the stability are improved.


Structure Lead Distribute Bragg Reflector Electrode Shape Electron Blocking Layer Light Extraction Efficiency 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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  1. [1]
    Li Zhonghui, Ding Xiaomin, Yang Zhijian, Yu Tongjun and Zhang Guoyi, J. Infrared Millim. Waves, 21 (2002), 390 (in Chinese)Google Scholar
  2. [2]
    Miao Hongli, Wang Jin, Wang Jing, Chen Jingbo, and Meng Jiwu, Journal of Optoelectronics⊙Laser, 15 (2004), 657.(in Chinese)Google Scholar
  3. [3]
    X. Guo and E. F. Schubert, Appl. Phys., 90 (2001), 4191.CrossRefGoogle Scholar
  4. [4]
    Hu Haiyang, Xu Xingsheng, Lu Lin, Song Qian, Du Wei and Wang Chunxia, Journal of Optoelectronics⊙Laser, 19 (2008), 569.(in Chinese)Google Scholar
  5. [5]
    Han Jun, Li Jianjun, Deng Jun, Xing Yanhui, Yu Xiaodong and Lin Weizhi, Journal of Optoelectronics⊙Laser, 19 (2008), 171. (in Chinese)Google Scholar
  6. [6]
    S. J. Chang, C. S. Chang and Y. K. Su, IEEE Photonics Technology Letters, 16 (2004), 1002.CrossRefADSGoogle Scholar
  7. [7]
    O. Svensk, P.t. Torma, S. Suibkonen, M. Ali, H. Lipsanen and M. Sopanen, Journal of Crystal Crowth, 310 (2008), 5154.CrossRefADSGoogle Scholar
  8. [8]
    Zhang Junbing, Lin Yueming, Bo Lin and Zeng Xianghua, Acta Physica Sinica, 57 (2008), 5881.(in Chinese)Google Scholar
  9. [9]
    Vincenzo Fiorentinia, Appl. Phys. Lett., 80 (2002), 1204.CrossRefADSGoogle Scholar
  10. [10]
    Shi Guangguo and Cui Kai, Light-emitting Diodes of Semiconductor and Solid State Lighting, Science Press, 2007Google Scholar

Copyright information

© Tianjin University of Technology and Springer Berlin Heidelberg 2009

Authors and Affiliations

  • Yu-pei Fan (范玉佩)
    • 1
  • Li-wen Cheng (程立文)
    • 2
  • Yue-ming Lin (林岳明)
    • 3
  • Jun-bing Zhang (张俊兵)
    • 1
  • Xiang-hua Zeng (曾祥华)
    • 1
  1. 1.College of Physics and TechnologyYangzhou UniversityYangzhouChina
  2. 2.National Laboratory for Infrared Physics, Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina
  3. 3.Yangzhou Huaxia Integrated OE System Co., Ltd.YangzhouChina

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