Optoelectronics Letters

, Volume 5, Issue 5, pp 337–340 | Cite as

Optimization of electrode shape for high power GaN-based light-emitting diodes

  • Yu-pei Fan (范玉佩)
  • Li-wen Cheng (程立文)
  • Yue-ming Lin (林岳明)
  • Jun-bing Zhang (张俊兵)
  • Xiang-hua Zeng (曾祥华)
Article
  • 48 Downloads

Abstract

Because the polarization effect influences the distribution of the carriers in the multiple quantum wells of the light-emitting diodes (LEDs), the light-emitting efficiency is also affected. The influence of the polarization effect on GaN-based LEDs’ performance is simulated. By simulating four different types of electrode shapes, it’s found that the electrode shape influences not only the photoelectric characteristics but also the optical absorption by the semiconductor. Through the optimization of the electrode shape, the I–V characteristic is improved, and the series resistance is lowered. The optical absorption by the semiconductor is decreased and then the heat generated in the LEDs is lowered. As a result, both the photoelectric conversion efficiency and the stability are improved.

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Copyright information

© Tianjin University of Technology and Springer Berlin Heidelberg 2009

Authors and Affiliations

  • Yu-pei Fan (范玉佩)
    • 1
  • Li-wen Cheng (程立文)
    • 2
  • Yue-ming Lin (林岳明)
    • 3
  • Jun-bing Zhang (张俊兵)
    • 1
  • Xiang-hua Zeng (曾祥华)
    • 1
  1. 1.College of Physics and TechnologyYangzhou UniversityYangzhouChina
  2. 2.National Laboratory for Infrared Physics, Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina
  3. 3.Yangzhou Huaxia Integrated OE System Co., Ltd.YangzhouChina

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