Optoelectronics Letters

, Volume 3, Issue 1, pp 1–3

Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD

  • Niu Nan-hui 
  • Wang Huai-bing 
  • Liu Jian-ping 
  • Liu Nai-xin 
  • Xing Yan-hui 
  • Han Jun 
  • Deng Jun 
  • Shen Guang-di 
Article

DOI: 10.1007/s11801-007-6116-1

Cite this article as:
Niu, N., Wang, H., Liu, J. et al. Optoelectron. Lett. (2007) 3: 1. doi:10.1007/s11801-007-6116-1

Abstract

InGaN/GaN MQWs structures were grown by MOCVD. The effects of the growth interruption time on the optical and structural properties of InGaN/GaN MQWs were investigated. The experimental results show that the growth interruption can improve the interface quality, increase the intensity of photoluminescence (PL) and electroluminescence (EL); but if the interruption time was too long, the well thickness and the average In composition of MQWs decreased, and the EL intensity also decreased due to poor interface quality and impurities derived from growth interruption.

CLC number

TN305 

Copyright information

© Tianjin University of Technology 2007

Authors and Affiliations

  • Niu Nan-hui 
    • 1
  • Wang Huai-bing 
    • 1
  • Liu Jian-ping 
    • 1
  • Liu Nai-xin 
    • 1
  • Xing Yan-hui 
    • 1
  • Han Jun 
    • 1
  • Deng Jun 
    • 1
  • Shen Guang-di 
    • 1
  1. 1.Institute of Information, Beijing Optoelectronic Technology LaboratoryBeijing University of Technology BeijingChina

Personalised recommendations