Effects of ratio of hydrogen flow on microstructure of hydrogenated microcrystalline silicon films deposited by magnetron sputtering at 100 °C
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Abstract
Hydrogenated microcrystalline silicon (µc-Si:H) films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100 °C using a mixture of argon (Ar) and hydrogen (H2) gasses as precursor gas. The effects of the ratio of hydrogen flow (H2/(Ar+H2)%)) on the microstructure were evaluated. Results show that the microstructure, bonding structure, and surface morphology of the µc-Si:H films can be tailored based on the ratio of hydrogen flow. An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%. The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40% to 70%. The surface roughness of thin films increased, and total hydrogen content decreased as the ratio of hydrogen flow increased. All µc-Si:H films have a preferred (111) orientation, independent of the ratio of hydrogen flow. And the µc-Si:H films had a dense structure, which shows their excellent resistance to post-oxidation.
Key words
hydrogenated microcrystalline silicon films radio frequency magnetron sputtering ratio of hydrogen flow low temperature microstructure氢稀释比对磁控溅射低温(100 °C)沉积氢化微晶硅薄膜微结构特性的影响
摘要
在低温(100 °C)条件下采用磁控溅射在玻璃和硅(100)衬底上沉积氢化微晶硅(μc-Si:H)薄膜,研 究不同氢稀释比对微晶硅薄膜微结构特性的影响。结果表明:薄膜从非晶相过渡到了微晶相当氢稀释 比增加到约50%,氢化微晶硅薄膜的结晶率随氢稀释比从40%增加到70%先增加后趋于稳定;薄膜的 表面粗糙度随着氢稀释比的增加而增加,氢含量的变化趋势与之相反;所制备的氢化微晶硅薄膜都具 有 (111)择优取向,与氢稀释比无关,且薄膜结构致密。
关键词
微晶硅薄膜 射频磁控溅射 氢稀释比例 低温 微结构Preview
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