Advertisement

Journal of Central South University

, Volume 18, Issue 5, pp 1572–1578 | Cite as

1.0 V low voltage CMOS mixer based on voltage control load technique

  • Bao-lin Wei (韦保林)Email author
  • Yu-jie Dai (戴宇杰)
  • Xiao-xing Zhang (张小兴)
  • Ying-jie Lü (吕英杰)
Article

Abstract

CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating, the load impedance in this proposed mixer is controlled by the LO signal, and it has only two stacked transistors at each branch which is suitable for low voltage applications. The mixer was designed and fabricated in 0.18 μm CMOS process for 2.4 GHz ISM band applications. With an input of 2.44 GHz RF signal and 2.442 GHz LO signal, the measurement specifications of the proposed mixer are: the conversion gain (GC) is 5.3 dB, the input-referred third-order intercept point (PIIP3) is 4.6 dBm, the input-referred 1 dB compression point (P1dB) is −7.4 dBm, and the single-sideband noise figure (NFSSB) is 21.7 dB.

Key words

CMOS active mixer voltage control load technique low voltage 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    VAHIDFOR M B, SHOAEI O. A CMOS low voltage down-converter mixer for sub 1V applications [C]// IEEE Workshop on Microelectronics and Electron Devices. Boise: IEEE Press, 2006: 5–6.Google Scholar
  2. [2]
    VIDOJKOVIC V, TANG J V D. A low-voltage folded-switching mixer in 0.18-μm CMOS [J]. IEEE Journal of Solid-State Circuits, 2005, 40(6): 1259–1264.CrossRefGoogle Scholar
  3. [3]
    HSIEH H H, LU L H. Designed of ultra-low-voltage RF front ends with complementary current-reused architectures [J]. IEEE Transactions on Microwave Theory and Techniques, 2007, 55(7): 1145–1158.CrossRefGoogle Scholar
  4. [4]
    CHEN C H, CHIANG P Y, CHRISTINA F J. A low voltage mixer with improved noise figure [J]. IEEE Microwave and Wireless Components Letters, 2009, 19(2): 92–94.CrossRefGoogle Scholar
  5. [5]
    WENG R M, WANG J C, WEI H C. A 1V 2.4 GHz down conversion folded mixer [C]// IEEE Asia Pacific Conference on Circuits and Systems. Singapore: IEEE Press, 2006: 1450–1452.Google Scholar
  6. [6]
    KLUMPERINK E A M, LOUWSMA S M, WIENK G J M, NAUTA B. A CMOS switched transconductor mixer [J]. IEEE Journal of Solid-State Circuits, 2004, 39(8): 1231–1240.CrossRefGoogle Scholar
  7. [7]
    HUANG M F, KUO C J, LEE S Y. A 5.25-GHz CMOS folded-cascode even-harmonic mixer for low-voltage applications [J]. IEEE Transactions of Microwave Theory and Techniques, 2006, 54(2): 660–669.CrossRefGoogle Scholar
  8. [8]
    RAZAVI B. Design of analog CMOS integrated circuits [M]. New York: McGraw-Hill, 2001: 20–332.Google Scholar
  9. [9]
    DARABI H, CHIU J. A noise cancellation technique in active RF-CMOS mixers [J]. IEEE Journal of Solid-State Circuits, 2005, 40(12): 2628–2632.CrossRefGoogle Scholar
  10. [10]
    LEUNG B. VLSI for wireless communication [M]. New Jersey: Prentice Hall, 2002: 151–165.Google Scholar
  11. [11]
    LIU Lu, WANG Zhi-hua. Analysis and design of a low-voltage RF CMOS mixer [J]. IEEE Transactions on Circuits and Systems-II: Express Briefs, 2006, 53(3): 212–216.CrossRefGoogle Scholar
  12. [12]
    TERROVITIS M T, Meyer R G. Noise in current-commutating CMOS mixers [J]. IEEE Journal of Solid-State Circuits, 2006, 54(7): 2917–2924.Google Scholar
  13. [13]
    TERROVITIS M T. Intermodulation distortion in current commutating CMOS mixers [J]. IEEE Journal of Solid-State Circuits, 2000, 35(10): 1461–1473.CrossRefGoogle Scholar
  14. [14]
    SOORAPANTH T, LEE T H. RF linearity of short-channel MOSFET’s [C]// 1st International Workshop on Design Mixed-Mode Integrate Circuits Application. Mexico: IEEE press, 1997: 81–84.Google Scholar
  15. [15]
    NGUYEN T K, KRIZHANOVSKII V. A low-power RF direct-conversion receiver/transmitter for 2.4-GHz-band IEEE802.15.4 standard in 0.18-μm CMOS technology [J]. IEEE Transactions of Microwave Theory and Techniques, 2006, 54(12): 4062–4071.CrossRefGoogle Scholar
  16. [16]
    ROTELLA F, BHATTACHARYA B K, BLASCHKE V, MATLOUBIAN M, BROTMAN A, CHENG Y, DIVECHA R, HOWARD D, LAMPAERT K, MILIOZZI P, RACANELLI M, SINGH P, ZAMPARDI P J. A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design [J]. IEEE Transactions on Electronic Devices, 2005, 52(7): 1429–1441.CrossRefGoogle Scholar
  17. [17]
    CHEUNG T S, LONG J. Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits [J]. IEEE Journal of Solid-state Circuits, 2006, 41(5): 1183–1200.CrossRefGoogle Scholar

Copyright information

© Central South University Press and Springer-Verlag Berlin Heidelberg 2011

Authors and Affiliations

  • Bao-lin Wei (韦保林)
    • 1
    Email author
  • Yu-jie Dai (戴宇杰)
    • 2
  • Xiao-xing Zhang (张小兴)
    • 2
  • Ying-jie Lü (吕英杰)
    • 2
  1. 1.School of Information and CommunicationGuilin University of Electronic TechnologyGuilinChina
  2. 2.Institute of MicroelectronicsNankai UniversityTianjinChina

Personalised recommendations