Design of small-area multi-bit antifuse-type 1 kbit OTP memory

  • Long-zhen Li (李龙镇)
  • J. H. Lee
  • T. H. Kim
  • K. H. Jin
  • M. H. Park
  • P. B. Ha
  • Y. H. KimEmail author


A multi-bit antifuse-type one-time programmable (OTP) memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the conventional antifuse-type OTP memory can store a bit per cell, a proposed OTP memory can store two consecutive bits per cell through a data compression technique. The 1 kbit OTP memory designed with Magnachip 0.18 μm CMOS (complementary metal-oxide semiconductor) process is 34% smaller than the conventional single-bit antifuse-type OTP memory since the sizes of cell array and row decoder are reduced. And the programming time of the proposed OTP memory is nearly 50% smaller than that of the conventional counterpart since two consecutive bytes can be compressed and programmed into eight OTP cells at once. The layout area is 214 μm × 327 μm, and the read current is simulated to be 30.4 μA.

Key words

multi-bit OTP programming time antifuse memory data compression 


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Copyright information

© Central South University Press and Springer-Verlag GmbH 2009

Authors and Affiliations

  • Long-zhen Li (李龙镇)
    • 1
    • 2
  • J. H. Lee
    • 1
  • T. H. Kim
    • 1
  • K. H. Jin
    • 1
  • M. H. Park
    • 1
  • P. B. Ha
    • 1
  • Y. H. Kim
    • 1
    Email author
  1. 1.Department of Electronic EngineeringChangwon National UniversityChangwonKorea
  2. 2.Department of Computer Science and TechnologyYanbian UniversityYanjiChina

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