Improvement in growth yield of single-walled carbon nanotubes with narrow chirality distribution by pulse plasma CVD
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A pulse plasma chemical vapor deposition (CVD) technique was developed for improving the growth yield of single-walled carbon nanotubes (SWNTs) with a narrow chirality distribution. The growth yield of the SWNTs could be improved by repetitive short duration pulse plasma CVD, while maintaining the initial narrow chirality distribution. Detailed growth dynamics is discussed based on a systematic investigation by changing the pulse parameters. The growth of SWNTs with a narrow chirality distribution could be controlled by the difference in the nucleation time required using catalysts comprising relatively small or large particles as the key factor. The nucleation can be controlled by adjusting the pulse on/off time ratio and the total processing time.
Keywordssingle-walled carbon nanotubes chirality-controlled synthesis pulse plasma chemical vapor deposition
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This work was supported in part by the Grant-in-Aid for Scientific Research B (Grant No. 16H03892), Grant-in-Aid for Challenging Exploratory Research (Grant No. 16K13707) from JSPS KAKENHI, JST-PRESTO (Grant No. J170002074), and the Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University.
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