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Journal of Phase Equilibria and Diffusion

, Volume 32, Issue 3, pp 212–218 | Cite as

Reactive Diffusion Between Vanadium and Silicon

  • S. Prasad
  • A. PaulEmail author
Basic and Applied Research

Abstract

Interdiffusion study is conducted in the V-Si system to determine integrated diffusion coefficients of the phases. Activation energy values are calculated from the experiments conducted at different temperatures. The average values are found to be 208, 240 and 141 kJ/mol, respectively, for the V3Si, V5Si3 and VSi2 phases. The low activation energy for the VSi2 phase indicates very high concentration of defects or the significant contribution from the grain boundary diffusion. The error in calculation of diffusion parameters from a very thin phase layer in a multiphase diffusion couple is discussed. Further the data available in the literature in this system is compared and the problems in the indirect methodology followed previously to calculate the diffusion parameters are discussed.

Keywords

diffusion intermetallic metal silicides V-Si system 

Notes

Acknowledgments

A. Paul would like to acknowledge the financial support received from CSIR and DRDO India.

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Copyright information

© ASM International 2011

Authors and Affiliations

  1. 1.Department of Materials EngineeringIndian Institute of ScienceBangaloreIndia

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