Journal of Materials Engineering and Performance

, Volume 19, Issue 7, pp 1054–1057

Catalytic Growth of Large-Scale GaN Nanowires

Article

DOI: 10.1007/s11665-009-9574-8

Cite this article as:
Chen, J. & Xue, C. J. of Materi Eng and Perform (2010) 19: 1054. doi:10.1007/s11665-009-9574-8

Abstract

A novel lanthanon seed was employed as the catalyst for the growth of GaN nanowires. Large-scale GaN nanowires have been synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. Scanning electron microscopy, x-ray diffraction, high-resolution transmission electron microscopy, and Fourier transform infrared spectroscopy were used to characterize the samples. The results demonstrate that the nanowires are single-crystal hexagonal wurtzite GaN. The growth mechanism of GaN nanowires is also discussed.

Keywords

ammoniating magnetron sputtering nanowires semiconductor material 

Copyright information

© ASM International 2009

Authors and Affiliations

  1. 1.Department of Mechanical EngineeringZhenjiang Vocational College of Mechanical & Electrical TechnologyZhenjiangChina
  2. 2.Institute of Semiconductors, College of Physics and ElectronicsShandong Normal UniversityJi’nanChina

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