Journal of Electronic Materials

, Volume 28, Issue 10, pp L24–L26 | Cite as

A simple wet etch for GaN

  • J. A. Bardwell
  • I. G. Foulds
  • J. B. Webb
  • H. Tang
  • J. Fraser
  • S. Moisa
  • S. J. Rolfe
Letters

Abstract

A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etching, this technique does not require an electrical contact to be made to the sample, and nitrides deposited on insulating substrates (such as sapphire) can be etched. The technique relies on adding an appropriate oxidizing agent, in this case, peroxydisulfate to KOH solutions. Maximum etch rates are observed at pH 12.4. The etch rate increases linearly with light intensity at 365 nm up to intensities of 25 mW/cm2, where etch rates of up to 50 nm/min are observed.

Key words

(GaN) gallium nitride wet etch photo-enhanced etching 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 1999

Authors and Affiliations

  • J. A. Bardwell
    • 1
  • I. G. Foulds
    • 1
  • J. B. Webb
    • 1
  • H. Tang
    • 1
  • J. Fraser
    • 1
  • S. Moisa
    • 1
  • S. J. Rolfe
    • 1
  1. 1.Institute for Microstructural SciencesNational Research CouncilOttawaCanada

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