Journal of Electronic Materials

, Volume 28, Issue 4, pp L5–L8 | Cite as

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

  • Tsvetanka S. Zheleva
  • Scott A. Smith
  • Darren B. Thomson
  • Kevin J. Linthicum
  • Pradeep Rajagopal
  • Robert F. Davis


Lateral growth of gallium nitride (GaN) films having a low density of dislocations and suspended from side walls of [0001] oriented GaN columns and over adjacent etched wells has been achieved without the use of, or contact with, a supporting mask or substrate. Pendeo-epitaxy is proposed as the descriptive term for this growth technique. Selective growth was achieved using process parameters that promote lateral growth of the \(\{ 11\bar 20\} \) planes of GaN and disallow nucleation of this phase on the exposed silicon carbide substrate. The large horizontal/vertical growth rate ratio indicate that the diffusion distances and the rates of diffusion of the reactant species along the (0001) surfaces were sufficient to allow them to reach and move along the \(\{ 11\bar 20\} \) surfaces before they were chemically adsorbed. A four-to-five order decrease in the dislocation density was observed via transmission electron microscopy in the free-standing laterally grown GaN relative to that in the GaN columns. Curvature of the \(\{ 11\bar 20\} \) planes as they approached coalescence, and elongated voids below the regions of coalescence were formed. The use of optimized growth conditions or more closely spaced columns should eliminate these voids.

Key words

GaN lateral epitaxy metalorganic vapor phase epitaxy (MOVPE) microstructure pendeo-epitaxy selective etching selective growth transmission electron microscopy (TEM) 


  1. 1.
    O.H. Nam, M.D. Bremser, B. Ward, R. J. Nemanich, and R.F. Davis, Jpn. J. Appl. Phys. 36, Part 2 (5A), L532 (1997).Google Scholar
  2. 2.
    T.S. Zheleva, O.H. Nam, M.D. Bremser and R.F. Davis, Appl. Phys. Lett. 71, (17) 2472 (1997).CrossRefGoogle Scholar
  3. 3.
    O.H. Nam, T.S. Zheleva, M.D. Bremser and R.F. Davis, Appl. Phys. Lett. 71, (18), 2638 (1997).CrossRefGoogle Scholar
  4. 4.
    T.S. Zheleva, O.H. Nam, J.D. Griffin, M.D. Bremser and R.F. Davis, MRS Symp. Proc. 482, (Pittsburgh, PA: Mater. Res. Soc., 1997), p. 393.Google Scholar
  5. 5.
    O.H. Nam, T.S. Zheleva, M.D. Bremser and R.F. Davis, J. Electron. Mater. 27 (4), 233 (1998).Google Scholar
  6. 6.
    T.Zheleva, W.M. Ashmawi, O.H. Nam and R.F. Davis, Appl. Phys. Lett. 74 (15), (1999).Google Scholar
  7. 7.
    A. Usui, H. Sunakawa, A. Sakai and A.A. Jamaguchi, Jpn. J. Appl. Phys. 36, L899 (1997).Google Scholar
  8. 8.
    A. Sakai, H. Sunakawa and A. Usui, Appl. Phys. Lett. 71, 2259 (1997).CrossRefGoogle Scholar
  9. 9.
    H. Marchand, J.P. Ibbetson, P.T. Fini, P. Kosodoy, S. Keller, S. DenBaars, J.S. Speck and U.K. Mishra, Materials Internet J. - Nitride Semiconductor Res. 3, 3 (1998).Google Scholar
  10. 10.
    H.Y. Zhong, M.A.L. Johnson, T. McNulty, J.D. Brown, J.W. Cook Jr. and J.F. Schezina, Materials Internet J.-Nitride Semiconductor Res. 3, 6 (1998).Google Scholar
  11. 11.
    S. Nakamura and G. Fasol, The Blue Laser Diode - GaN Based Light Emitters and Lasers (Heidelberg: Springer-Verlag, 1997).Google Scholar
  12. 12.
    G. Fasol, Sci. 278, 1902 (1997).CrossRefGoogle Scholar
  13. 13.
    W.T. Tsang and A.Y. Cho, Appl. Phys. Lett. 30 (6), 293 (1977).CrossRefGoogle Scholar
  14. 14.
    E. Kapon, M.C. Tamargo and D.M. Hwang, Appl. Phys. Lett. 50 (6), 347 (1987).CrossRefGoogle Scholar
  15. 15.
    E. Kapon, J.P. Harbison, C.P. Yun and L.T. Florez, Appl. Phys. Lett. 54 (4), 304 (1989).CrossRefGoogle Scholar
  16. 16.
    M.E. Hoenk, C. Nieh, H.Z. Chen and K.J. Vahala, Appl. Phys. Lett. 55 (1), 53 (1989).CrossRefGoogle Scholar
  17. 17.
    S. Shimomura, N. Okamoto, M. Takeuchi, E. Tamaoka, Y. Yuba, S. Namba and S. Hiyamizu, J. Cryst. Growth, 111, 1105 (1991).CrossRefGoogle Scholar
  18. 18.
    S.A. Smith, C. Wolden, M.D. Bremser, A.D. Hanser, R.F. Davis and W.V. Lampert, Appl. Phys. Lett. 71 (25), 3631 (1997).CrossRefGoogle Scholar
  19. 19.
    A. Thon and T.F. Kuech, Appl. Phys. Lett. 69, 55 (1996).CrossRefGoogle Scholar

Copyright information

© TMS-The Minerals, Metals and Materials Society 1999

Authors and Affiliations

  • Tsvetanka S. Zheleva
    • 1
  • Scott A. Smith
    • 1
  • Darren B. Thomson
    • 1
  • Kevin J. Linthicum
    • 1
  • Pradeep Rajagopal
    • 1
  • Robert F. Davis
    • 1
  1. 1.Department of Materials Science and EngineeringNorth Carolina State UniversityRaleigh

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