Journal of Electronic Materials

, Volume 28, Issue 12, pp 1433–1439 | Cite as

Zinc diffusion in InAsP/InGaAs heterostructures

  • Martin H. Ettenberg
  • Michael J. Lange
  • Alan R. Sugg
  • Marshall J. Cohen
  • Gregory H. Olsen
Special Issue Paper
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Accepted:

Abstract

A systematic study of the sealed ampoule diffusion of zinc into epitaxially grown InP, In0.53Ga0.47As, In0.70Ga0.30As, In0.82Ga0.18As, and through the InAsP/InGaAs interface is presented. Diffusion depths were measured using cleave-and-stain techniques, electrochemical profiling, and secondary ion mass spectroscopy. The diffusion coefficients, \(D = D_o e^{ - E_a /kT} \), were derived. For InP, D0=4.82 × 10−2cm2/sec and Ea=1.63 eV and for In0.53Ga0.47As, D0=2.02 × 104cm2/sec and Ea=2.63 eV. Diffusion into the heteroepitaxial structures used in the fabrication of planar PIN photodiodes is dominated by the effects of the InP/InGaAs interface.

Key words

Indium gallium arsenide (InGaAs) indium phosphide (InP) zinc diffusion PIN photodiode 
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Copyright information

© TMS-The Minerals, Metals and Materials Society 1999

Authors and Affiliations

  • Martin H. Ettenberg
    • 1
  • Michael J. Lange
    • 1
  • Alan R. Sugg
    • 1
  • Marshall J. Cohen
    • 1
  • Gregory H. Olsen
    • 1
  1. 1.Sensors Unlimited, Inc.Princeton

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