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Journal of Electronic Materials

, Volume 28, Issue 12, pp 1385–1389 | Cite as

Calculation of emissivity of Si wafers

  • Bhushan Sopori
  • Wei Chen
  • Jamal Madjdpour
  • N. M. Ravindra
Special Issue Paper

Abstract

A computer-software, Emissivity, has been developed to calculate the emissivity (ɛ) of silicon wafers of any surface morphology, for a given temperature and dopant concentration. The software uses a combination of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface coatings and multi-reflections within thin wafers. The refractive index and the absorption coefficient are calculated as a function of temperature and dopant concentration using an empirical model for an indirect bandgap semiconductor. The results of this model are compared with conventional emissivity calculations and experimental data.

Key words

Emissivity temperature dopant concentration silicon multilayer 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 1999

Authors and Affiliations

  • Bhushan Sopori
    • 1
  • Wei Chen
    • 1
    • 2
  • Jamal Madjdpour
    • 1
  • N. M. Ravindra
    • 2
  1. 1.National Renewable Energy LaboratoryGolden
  2. 2.New Jersey Institute of TechnologyNewark

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