Journal of Electronic Materials

, Volume 28, Issue 5, pp 563–566 | Cite as

Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells

  • G. H. Yu
  • X. W. Fan
  • Z. P. Guan
  • J. Y. Zhang
  • X. W. Zhao
  • D. Z. Shen
  • Z. H. Zheng
  • B. J. Yang
  • D. S. Jiang
  • Y. B. Chen
  • Z. M. Zhu
Special Issue Paper
  • 47 Downloads

Abstract

Photocurrent (PC) spectra of ZnCdSe-ZnSe double multi-quantum wells are measured at different temperature. Its corresponding photocurrent derivative (PCD) spectra are obtained by computing, and the PCD spectra have greatly enhanced the sensitivity of the relative weak PC signals. The polarization dependence of the PC spectra shows that the transitions observed in the PC spectra are heavy-hole related, and the transition energy coincide well with the results obtained by envelope function approximation including strain. The temperature dependence of the photocurrent curves indicates that the thermal activation is the dominant transport mechanism of the carriers in our samples. The concept of saturation temperature region is introduced to explain why the PC spectra have different temperature dependence in the samples with different structure parameters. It is found to be very useful in designing photovoltaic devices.

Key words

Double multi-quantum wells photocurrent spectra ZnCdSe-ZnSe 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 1999

Authors and Affiliations

  • G. H. Yu
    • 1
    • 2
  • X. W. Fan
    • 1
    • 2
  • Z. P. Guan
    • 1
    • 2
  • J. Y. Zhang
    • 1
    • 2
  • X. W. Zhao
    • 1
    • 2
  • D. Z. Shen
    • 1
    • 2
  • Z. H. Zheng
    • 1
    • 2
  • B. J. Yang
    • 1
    • 2
  • D. S. Jiang
    • 1
    • 2
  • Y. B. Chen
    • 3
  • Z. M. Zhu
    • 3
  1. 1.Changchun Institute of PhysicsChinese Academy of SciencesChangchunChina
  2. 2.Laboratory of Excited State ProcessesChinese Academy of SciencesChangchunChina
  3. 3.Institute of SemiconductorChinese Academy of SciencesBeijingChina

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