Journal of Electronic Materials

, Volume 28, Issue 5, pp 520–527 | Cite as

Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

  • R. Heitz
  • I. Mukhametzhanov
  • A. Madhukar
  • A. Hoffmann
  • D. Bimberg
Special Issue Paper

Abstract

We report photoluminescence (PL), time-resolved PL, and PL excitation experiments on InAs/GaAs quantum dots (QDs) of different size as a function of temperature. The results indicate that both the inhomogeneous properties of the ensemble and the intrinsic properties of single QDs are important in understanding the temperature-dependence of the optical properties. With increasing temperature, excitons are shown to assume a local equilibrium distribution between the localized QD states, whereas the formation of a position-independent Fermi-level is prevented by carrier-loss to the barrier dominating thermally stimulated lateral carrier transfer. The carrier capture rate is found to decrease with increasing temperature and, at room temperature, long escape-limited ground state lifetimes of some 10 ps are estimated. PL spectra excited resonantly in the ground state transition show matching ground state absorption and emission, indicating the intrinsic nature of exciton recombination in the QDs. Finally, the PL excitation spectra are shown to reveal size-selectively the QD absorption, demonstrating the quantum-size effect of the excited state splitting.

Key words

InAs/GaAs photoluminescence excitation spectroscopy self-organized quantum dots (QDs) 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 1999

Authors and Affiliations

  • R. Heitz
    • 1
  • I. Mukhametzhanov
    • 2
  • A. Madhukar
    • 2
  • A. Hoffmann
    • 1
  • D. Bimberg
    • 1
  1. 1.Institut für FestkörperphysikTechnische Universität BerlinBerlinGermany
  2. 2.Photonic Materials and Devices LaboratoryUniversity of Southern CaliforniaLos Angeles

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