Recent progress in CdZnTe crystals
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Abstract
CdZnTe crystals were grown by vertical gradient freezing (VGF) method with a Cd reservoir for controlling the Cd pressure under conditions such that the crystals are in equilibrium with a Cd vapor corresponding to the minimum deviation from stoichiometry. The precipitate size became smaller by a post growth annealing method in the VGF furnace after the crystal growth without using wafer annealing. The size became less than 2 µm. Precipitate-free crystals were also grown by controlling the cooling method. In addition, the carrier concentration of p-type CdZnTe crystals was reduced using polycrystals grown in pBN boats. We have found that the carrier concentration of p-type ingots is dependent on Na and Li impurity concentrations.
Key words
Carrier concentration CdZnTe Li Na precipitatesPreview
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References
- 1.H.R. Vydyanath, J.A. Ellsworth, J.J. Kennedy, B. Dean, C.J. Johnson, G.T. Neugebauer, J. Spepich and Pok-Kai Liao, J. Vac. Sci. Technol. 10, 1476 (1992).CrossRefGoogle Scholar
- 2.H.R. Vydyanath, J.A. Ellsworth, J.B. Parkinson, J.J. Kennedy, B. Dean, C.J. Johnson, G.T. Neugebauer, J. Spepich and Pok-Kai Liao, J. Electron. Mater. 22, 1073 (1993).Google Scholar
- 3.B. Li, J. Zhu, X. Zhang and J. Chu, J. Cryst. Growth 181, 204 (1997).CrossRefGoogle Scholar
- 4.P. Rudolph, A. Engel, I. Schentke and A. Grochocki, J. Cryst. Growth 147, 297 (1995).CrossRefGoogle Scholar
- 5.T. Asahi, O. Oda, Y. Taniguchi and A. Koyama, J. Cryst. Growth 161, 20 (1996).CrossRefGoogle Scholar
- 6.U. Becker, P. Rudolph, R. Boyn, M. Wienecke and I. Utke, Phys. Stat. Sol. 120, 653 (1990).CrossRefGoogle Scholar
- 7.Kenneth Zanio, J. Appl. Phys. 41, 1935 (1970).CrossRefGoogle Scholar
- 8.R. Triboulet, A. Aoudia and A. Lusson, J. Electron. Mater. 24, 1061 (1995).Google Scholar
- 9.J.P. Tower, S.P. Tobin, M. Kestigian, P.W. Norton, A.B. Bollong, H.F. Schaake and C.K. Ard, J. Electron. Mater. 24, 497 (1995).Google Scholar