Journal of Electronic Materials

, Volume 28, Issue 3, pp 261–265 | Cite as

Redistribution of implanted dopants in GaN

  • X. A. Cao
  • R. G. Wilson
  • J. C. Zolper
  • S. J. Pearton
  • J. Han
  • R. J. Shul
  • D. J. Rieger
  • R. K. Singh
  • M. Fu
  • V. Scarvepalli
  • J. A. Sekhar
  • J. M. Zavada
Special Issue Paper

Abstract

Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3–5×1014 cm−2 and annealed at tem peratures up to 1450°C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damageassisted diffusion at 900°C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10−13 cm2·s−1 at 1450°C for each of the dopants in GaN.

Key words

Annealing donors and acceptors GaN implantation 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 1999

Authors and Affiliations

  • X. A. Cao
    • 1
  • R. G. Wilson
    • 2
  • J. C. Zolper
    • 3
  • S. J. Pearton
    • 1
  • J. Han
    • 4
  • R. J. Shul
    • 4
  • D. J. Rieger
    • 4
  • R. K. Singh
    • 1
  • M. Fu
    • 5
  • V. Scarvepalli
    • 5
  • J. A. Sekhar
    • 5
  • J. M. Zavada
    • 6
  1. 1.Department of Materials Science and EngineeringUniversity of FloridaGainesville
  2. 2.ConsultantStevenson Ranch
  3. 3.Office of Naval ResearchArlington
  4. 4.Sandia National LaboratoriesAlbuquerque
  5. 5.Micropyretics Heaters International, Inc.Cincinnati
  6. 6.European Research Office, USARDSGLondonEngland

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