Dopant-selective photoenhanced wet etching of GaN
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Abstract
A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.
Key words
Dopant-selective etching gallium nitride (GaN) photoenhanced etching photoelectrochemical (PEC) etchingPreview
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