Advertisement

Journal of Electronic Materials

, Volume 26, Issue 3, pp 193–197 | Cite as

Electrical properties of metal-diamond-like-nanocomposite (Me-DLN) contacts to 6H SiC

  • K. J. Schoen
  • J. M. Woodall
  • A. Goel
  • C. Venkatraman
Article

Abstract

We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottky contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-type and p-type contacts are rectifying and measurement results suggest that the electrical characteristics are dominated by the properties of the tungsten SiC interface. The n-type contacts have a reverse leakage current density of 4.1 × 10−3 Acm−2 and the p-type contacts have a reverse leakage current density of 1.4 × 10−7 Acm−2 at −10 V. The n-type contacts have an current-voltage (I-V) extracted effective ϕBn of 0.7 eV with an ideality factor of 1.2 and a capacitance-voltage (C-V) extracted ϕBn of 1.2 e V. The p-type contacts have an I-V extracted effective ϕBp of 1.8 eV with an ideality factor of 1.7. Non-ideal I-V and C-V characteristics may be due to surface damage during W-DLN deposition.

Key words

High temperature contacts Metal-diamond-like-nanocomposite Schottky barrier contacts Silicon carbide Tungsten 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    W. Xie,Y. Wang, M.R. Melloch, J.A. Cooper, Jr., G.M. Johnson, L.A. Lipkin, J.W. Palmour and C.H. Carter, Jr., Silicon Carbide and Related Materials 1995, Proc. Sixth Intl. Conf., (1995), p. 785.Google Scholar
  2. 2.
    S.T Sheppard, M.R. Melloch and J.A. Cooper Jr., IEEE Electron Dev. Lett. 17 (1), 4 (1996).CrossRefGoogle Scholar
  3. 3.
    D.B. Slater, Jr., G.M. Johnson, L.A. Lipkin, A.V. Suvorov and J.W. Palmour, Third Intl. High Temperature Electronics Conf. (HiTEC), (1996).Google Scholar
  4. 4.
    N. Ramungul, T.P. Chow, M. Ghezzo, J. Kretchmer and W. Hennessy, IEEE Device Research Conf., (1996).Google Scholar
  5. 5.
    R.C. Clarke, A.K. Agarwal, R.R. Siergiej, C.D. Brandt and A.W. Morse, IEEE Device Research Conf, (1996).Google Scholar
  6. 6.
    J.W. Palmour, R. Singh, L.A. Lipkin and D.G. Waltz, Third International High Temperature Electronics Conf. (HiTEC), (1996).Google Scholar
  7. 7.
    J.N. Shenoy, M.R. Melloch and J.A. Cooper, Jr., IEEE Device Research Conf, (1996).Google Scholar
  8. 8.
    O. Kordina, J.P. Bergman, A. Henry, E. Janzén, S. Savage, J. Andre, L.P. Ramberg, U. Lindefelt, W. Hermansson and K. Bergman, Appl. Phys. Lett. 67, 1561 (1995).CrossRefGoogle Scholar
  9. 9.
    A. Itoh, T. Kimoto and H. Matsunami, IEEE Electron Dev. Lett. 17 (3), 139 (1996).CrossRefGoogle Scholar
  10. 10.
    P.G. Neudeck and D.J.Larkin, 1994 NASA Lewis Research & Technology Report.Google Scholar
  11. 11.
    V.F. Dorfman, A. Bozhko, B.N. Pypkin, R.T. Borra, A.R. Srivatsa, H. Zhang, T.A. Skotheim, I. Khan, D. Rodichev and G. Kirpilenko, Thin Solid Films 212, 274 (1992).CrossRefGoogle Scholar
  12. 12.
    D.J. Bray, A. Goel and M.T. Spohn, Advanced Materials and Processes December, 31 (1994).Google Scholar
  13. 13.
    F.H. Pollak, personal communication.Google Scholar
  14. 14.
    A. Itoh, O. Takemura, T. Kimoto and H. Matsunami, Silicon Carbide and Related Materials 1995, Pro. Sixth Intl. Conf. (1995), p. 685.Google Scholar
  15. 15.
    N. Lundberg, P. Tägström, U. Jansson and M. Östling, Silicon Carbide and Related Materials 1995, Proc. Sixth Intl. Conf., (1995), p. 677.Google Scholar
  16. 16.
    J.L. Freeouf, T.N. Jackson, S.E. Laux and J.M. Woodall, J. Vac. Sci. Technol. 21 (2), 570 (1982).CrossRefGoogle Scholar
  17. 17.
    S.M. Sze, Physics of Semiconductor Devices, (New York: John Wiley & Sons).Google Scholar
  18. 18.
    J. Crofton, private communication.Google Scholar

Copyright information

© The Metallurgical of Society of AIME 1997

Authors and Affiliations

  • K. J. Schoen
    • 1
  • J. M. Woodall
    • 1
  • A. Goel
    • 2
  • C. Venkatraman
    • 2
  1. 1.School of Electrical and Computer Engineering and the Engineering Research Center for Collaborative ManufacturingPurdue UniversityWest Lafayette
  2. 2.Advanced Refractory Technologies Inc.Buffalo

Personalised recommendations