Journal of Electronic Materials

, Volume 26, Issue 5, pp 440–443 | Cite as

Nearly room-temperature type-II quantum-well lasers at 3–4 μm

  • Chih-Hsiang Lin
  • P. C. Chang
  • S. J. Murry
  • D. Zhang
  • Rui Q. Yang
  • S. S. Pei
  • J. I. Malin
  • J. R. Meyer
  • C. L. Felix
  • J. R. Lindle
  • L. Goldberg
  • C. A. Hoffman
  • E. J. Bartoli
Article
Received:
Accepted:

Abstract

We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambient.

Key words

Laser diodes mid-infrared type-II heterostructures quantum wells 
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Copyright information

© The Metallurgical of Society of AIME 1997

Authors and Affiliations

  • Chih-Hsiang Lin
    • 1
  • P. C. Chang
    • 1
  • S. J. Murry
    • 1
  • D. Zhang
    • 1
  • Rui Q. Yang
    • 1
  • S. S. Pei
    • 1
  • J. I. Malin
    • 2
  • J. R. Meyer
    • 2
  • C. L. Felix
    • 2
  • J. R. Lindle
    • 2
  • L. Goldberg
    • 2
  • C. A. Hoffman
    • 2
  • E. J. Bartoli
    • 2
  1. 1.Space Vacuum Epitaxy Center, University of HoustonHouston
  2. 2.Code 5600, Naval Research LaboratoryWashington

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