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Journal of Electronic Materials

, Volume 26, Issue 2, pp 70–72 | Cite as

An empirical relation between the melting point and the direct bandgap of semiconducting compounds

  • B. R. Nag
Article

Abstract

The melting point is found to vary linearly with the direct bandgap for groups of semiconductors with common anions. Implication of this empirical result is discussed. The linear relation is used to choose between different reported values of melting point for some compounds.

Keywords

Bandgap entropy of fusion melting point semiconductor 

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References

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    J.A. Van Vechten, Handbook of Semiconductors, Vol. 3, ed. S.P. Keller (Amsterdam: North-Holland, 1980), p. 47.Google Scholar
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    J.A. Van Vechten, Phys. Rev. B 7, 1479 (1973).CrossRefGoogle Scholar
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    B.R. Nag, Electron Transport in Compound Semiconductors (Berlin: Springer-Verlag, 1980).Google Scholar

Copyright information

© The Metallurgical of Society of AIME 1997

Authors and Affiliations

  • B. R. Nag
    • 1
  1. 1.Calcutta UniversityCalcuttaIndia

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