Journal of Electronic Materials

, Volume 26, Issue 2, pp 64–69 | Cite as

Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE

  • A. Y. Lew
  • C. H. Yan
  • R. B. Welstand
  • J. T. Zhu
  • C. W. Tu
  • P. K. L. Yu
  • E. T. Yu
Article
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Accepted:

Abstract

We have used cross-sectional scanning tunneling microscopy (STM) to study interface structure in arsenide/phosphide heterostructures grown by gas-source molecular beam epitaxy (GSMBE) and by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). High-resolution images of GSMBE samples consisting of GaAs interrupted at 200Å intervals with a 40 s P2 flux reveal substantial, growth-temperature-dependent incorporation of phosphorus with nanometer-scale lateral variations in interface structure. STM images of InGaAs/InP multiple quantum well structures grown by LP-MOVPE show evidence of interface asymmetry and extensive atomic cross-incorporation at the interfaces. Data obtained by STM have been corroborated by high-resolution x-ray diffraction and reflection high-energy electron diffraction. Together, these studies provide direct information about nanometer-scale grading and lateral nonuniformity of arsenide/phosphide interfaces that can occur under these growth conditions.

Key words

GaAs gas source molecular beam epitaxy (GSMBE) InGaAs/InP low-pressure metalorganic vapor phase epitaxy (MOVPE) 
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Copyright information

© The Metallurgical of Society of AIME 1997

Authors and Affiliations

  • A. Y. Lew
    • 1
  • C. H. Yan
    • 1
  • R. B. Welstand
    • 1
  • J. T. Zhu
    • 1
  • C. W. Tu
    • 1
  • P. K. L. Yu
    • 1
  • E. T. Yu
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of California at San DiegoLa Jolla

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