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Journal of Electronic Materials

, Volume 26, Issue 10, pp 1261–1264 | Cite as

The morphology of CdTe deposited by organometallic vapor phase epitaxy: The effect of substrate misorientation

  • K. Yong
  • P. J. Sides
  • A. J. Gellman
Special Issue Paper

Abstract

Substrate misorientation and growth temperature influence the morphology of CdTe epilayers grown by organometallic vapor phase homoepitaxy. These effects were investigated by using CdTe{100} and CdTe{100} misoriented by 2, 4, 6, and 8° toward 〈111〉Te as substrates for growth in the temperature range from 337 to 425°C. Low angle pyramidal facets appeared on films grown on the CdTe(100) surface. The number density of these pyramidal facets decreased to zero as the substrate misorientation angle increased to 4°. At higher misorientation angles, low angle protrusions, resembling fish scales, appeared on the surface. When the temperature was increased, facet size decreased but facet density increased. The film morphology at the high misorientations, however, improved remarkably with increasing temperature. Cross-sectional transmission electron microscopy provided evidence that both the faceted CdTe films and films with a mirror-like finish were epitaxial single crystals with no planar defects. Schwoebel barriers are suggested as the reason for the faceting of the surface grown on CdTe{100}.

Key words

Cadmium telluride facets morphology organometallic vapor phase epitaxy (OMVPE) 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 1997

Authors and Affiliations

  • K. Yong
    • 1
  • P. J. Sides
    • 1
  • A. J. Gellman
    • 1
  1. 1.Department of Chemical EngineeringCarnegie Mellon UniversityPittsburgh

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