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Field-Effect Transistor Behavior of Synthesized In2O3/InP (100) Nanowires via the Vapor–Liquid–Solid Method

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Abstract

We demonstrated the feasibility of using InP (100) substrates, a different indium source, for the synthesis of In2O3 nanowires by the vapor–liquid–solid (VLS) method using a 20-nm-thick Au layer as a catalyst. By varying the thickness of the Au layer and the growth temperature (T), the nanowires showed different morphologies. The nanowires grew along the (100) direction and had perfect crystallinity and lengths up to several hundreds of micrometers. The configured field-effect transistor revealed an n-type behavior with 115 μA of the drain-source current, IDS, under 1.0 V of gate voltage, VDS, at 1.33 × 10−4 kPa of pressure and temperature of 20°C. This result indicates that it is feasible to use different In sources to synthesize In2O3 nanowires by the VLS method for electronic devices.

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Acknowledgments

This research was partially supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1I1A3A04037241) and Graduate University of Science and Technology, Vietnam Academy of Science and Technology (grant no. GUST.STS.ÐT2020-HH10).

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Authors and Affiliations

  1. Division of Computational Mechatronics. Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    Viet Duc Ngo

  2. Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    Viet Duc Ngo

  3. Institute of Theoretical and Applied Research, Duy Tan University, Hanoi, 100000, Vietnam

    Tien Dai Nguyen

  4. Faculty of Natural Science, Duy Tan University, Da Nang, 550000, Vietnam

    Tien Dai Nguyen

  5. Graduate University of Science and Technology, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam

    Tien Thanh Nguyen

  6. Institute of Materials Science, Vietnam Academy of Science and Technonolgy, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam

    Tien Thanh Nguyen

  7. Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, South Korea

    Eui-Tae Kim

  8. University of Science and Technology, Daejeon, 34113, South Korea

    Viet Chien Nguyen

  9. Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore, Tamil Nadu, 641 020, India

    Marnadu Raj

  10. Korea Research Institute of Standard Science (KRISS), Daejeon, 34113, South Korea

    Sang Jun Lee

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  1. Viet Duc Ngo
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Ngo, V.D., Nguyen, T.D., Nguyen, T.T. et al. Field-Effect Transistor Behavior of Synthesized In2O3/InP (100) Nanowires via the Vapor–Liquid–Solid Method. J. Electron. Mater. 50, 59–64 (2021). https://doi.org/10.1007/s11664-020-08548-2

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  • DOI: https://doi.org/10.1007/s11664-020-08548-2

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