High-performance p-type silicon target materials of Co-doped B and Al elements were produced using Ga and P contaminated upgraded metallurgical-grade silicon (UMG-Si) at the industrial scale. The purity of silicon ingots is above 5.5 N after the directional solidification process, which meets market demand. The segregation behavior of elements and compensation effect on the resistivity are discussed. The effective segregation coefficients of B, Al, Ga, and P for ingot No. 1 were approximately 0.66, 0.14, 0.38, and 0.49, respectively. The segregation coefficients of P, Ga, and Al become larger, the segregation effect tends to become smaller, which is attributed to the doped and contaminated elements that have the recombination effect on the holes and electrons. The distribution of resistivity can be regulated precisely by the compensation difference [NA–ND] along the solidified fraction. The mean resistivity of the ingots is approximately 0.013 Ω cm. Prolonging melting time is conducive to the uniform distribution of doping elements.
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The authors gratefully acknowledge financial support from the Specialized Research Fund for the National Key Research and Development Plan (Grant No. 2018YFB1500401), the National Natural Science Foundation of China (Grant Nos. 51974057 and 51404053), the Major Science and Technology Projects in Yunnan Province (Grant No. 2019ZE007) and Liaoning Province Natural Science Foundation of China (Grant No. 20180550295).
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Wang, K., Tan, Y., Jiang, D. et al. Effects of Co-Doped B and Al on the Improvement of Electrical Properties of Ga and P Contaminated Upgraded Metallurgical-Grade Silicon Materials. Journal of Elec Materi (2020). https://doi.org/10.1007/s11664-020-07942-0
- Silicon target
- segregation behavior