Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application
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The phase transition properties of MgSb/Sb multilayer thin films were studied systematically. After composited with MgSb layer, MgSb/Sb thin film had better amorphous stability and higher resistance. One-dimensional growth dominated mechanism made MgSb/Sb have ultra-fast phase change speed. The grain growth and interface stress resulted in a little change on surface morphology during crystallization. The multilayer structure was confirmed by element distribution on cross section. The reversible resistance switching was achieved on [MgSb(7 nm)/Sb(3 nm)]5-based device. This work showed that MgSb/Sb multilayer film was a potential material with fast speed and low power consumption for phase change memory application.
KeywordsMgSb/Sb multilayer thin film crystallization behavior resistance mutation phase change memory
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This work was supported by the National Natural Science Foundation of China (No. 11974008 and 11774438) and Changzhou key laboratory of high technology research (CM20173002) and sponsored by the Qing Lan Project and the Opening Project of State Key Laboratory of Silicon Materials (SKL2017-04) and the Opening Project of Institute of Semiconductors, Chinese Academy of Sciences (KLSMS-1805) and practice Innovation Program of Jiangsu Province (SJCX19_0712).
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