Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application

  • Song Sun
  • Yifeng HuEmail author
  • Yongkang Xu
  • Tianshu LaiEmail author


The phase transition properties of MgSb/Sb multilayer thin films were studied systematically. After composited with MgSb layer, MgSb/Sb thin film had better amorphous stability and higher resistance. One-dimensional growth dominated mechanism made MgSb/Sb have ultra-fast phase change speed. The grain growth and interface stress resulted in a little change on surface morphology during crystallization. The multilayer structure was confirmed by element distribution on cross section. The reversible resistance switching was achieved on [MgSb(7 nm)/Sb(3 nm)]5-based device. This work showed that MgSb/Sb multilayer film was a potential material with fast speed and low power consumption for phase change memory application.


MgSb/Sb multilayer thin film crystallization behavior resistance mutation phase change memory 


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This work was supported by the National Natural Science Foundation of China (No. 11974008 and 11774438) and Changzhou key laboratory of high technology research (CM20173002) and sponsored by the Qing Lan Project and the Opening Project of State Key Laboratory of Silicon Materials (SKL2017-04) and the Opening Project of Institute of Semiconductors, Chinese Academy of Sciences (KLSMS-1805) and practice Innovation Program of Jiangsu Province (SJCX19_0712).


  1. 1.
    H. Yifeng, X. Zhu, H. Zou, L. Zheng, S. Song, and Z. Song, J. Alloys Compd. 696, 150 (2017).CrossRefGoogle Scholar
  2. 2.
    D. Dimitrov and H.P.D. Shieh, Mater. Sci. Eng. B (Solid-State Mater. Adv. Technol.) B107, 107 (2004).CrossRefGoogle Scholar
  3. 3.
    P.H. Lee, P.C. Chang, D.S. Chao, J.H. Liang, S.C. Chang, M.J. Tsai, and T.S. Chin, Thin Solid Films 520, 6636 (2012).CrossRefGoogle Scholar
  4. 4.
    S. Lanlan, S. Sannian, S. Zhitang, L. Le, G. Tianqi, C. Yan, W. Liangcai, L. Bo, and F. Songlin, J. Mater. Sci.: Mater. Electron. 28, 923 (2017).Google Scholar
  5. 5.
    L. Yegang, S. Sannian, S. Zhitang, R. Feng, W. Liangcai, Z. Min, L. Bo, and Y. Dongning, Appl. Phys. Lett. 100, 193114 (2012).CrossRefGoogle Scholar
  6. 6.
    W. Fenfen, W. Long, K. Tao, S. Lin, H. Rong, Z. Jie, and C. Guosheng, Appl. Phys. Lett. 103, 181908 (2013).CrossRefGoogle Scholar
  7. 7.
    S. Song, Z. Song, Y. Lu, B. Liu, L. Wu, and S. Feng, Mater. Lett. 64, 2728 (2010).CrossRefGoogle Scholar
  8. 8.
    Y. You, S. Morioka, S. Kozaki, R. Satoh, and S. Hosaka, Appl. Surf. Sci. 349, 230 (2015).CrossRefGoogle Scholar
  9. 9.
    H. Yifeng, M. Sun, S. Song, Z. Song, and J. Zhai, J. Alloys Compd. 551, 551 (2013).CrossRefGoogle Scholar
  10. 10.
    V. Tallapally, R.J.A. Esteves, L. Nahar, and I.U. Arachchige, Chem. Mater. 28, 5406 (2016).CrossRefGoogle Scholar
  11. 11.
    L. Chen, Z. Zhang, S. Song, Z. Song, Q. Zheng, X. Zhang, J. Zhang, W. Zheng, H. Shao, X. Zhu and W. Yu, Appl Phys Lett, 110 (2017).Google Scholar
  12. 12.
    V. Tallapally, T.A. Nakagawara, D.O. Demchenko, Ü. ÖzgÜr, and I.U. Arachchige, Nanoscale 10, 20296 (2018).CrossRefGoogle Scholar
  13. 13.
    R. Golovchak, Y.G. Choi, S. Kozyukhin, Y. Chigirinsky, A. Kovalskiy, P. Xiong-Skiba, J. Trimble, R. Pafchek, and H. Jain, Appl. Surf. Sci. 332, 533 (2015).CrossRefGoogle Scholar
  14. 14.
    R. Zhang, Y.F. Hu, X.Q. Zhu, Q.Q. Chou, and T.S. Lai, ECS J. Solid State Sci. Technol. 7, 452 (2018).CrossRefGoogle Scholar
  15. 15.
    W. Wu, Y. Hu, X. Zhu, Y. Sui, J. Xue, L. Yuan, S. Song, and Z. Song, J. Mater. Sci.: Mater. Electron. 26, 9700 (2015).Google Scholar
  16. 16.
    J.H. Fu, K.Y. Wang, K.H. Lee, and L.H. Chou, Thin Solid Films 517, 2813 (2009).CrossRefGoogle Scholar
  17. 17.
    W. Yong, T. Wang, G. Liu, T. Guo, L. Tao, S. Lv, Y. Cheng, S. Song, K. Ren, and Z. Song, Scr. Mater. 164, 25 (2019).CrossRefGoogle Scholar
  18. 18.
    X. Zhu, R. Zhang, Y. Hu, T. Lai, J. Zhang, H. Zou, and Z. Song, Chin. Phys. Lett. 35, 056803 (2018).CrossRefGoogle Scholar
  19. 19.
    V. Tallapally, D. Damma, and S.R. Darmakkolla, Chem. Commun. 55, 1560 (2019).CrossRefGoogle Scholar
  20. 20.
    Y. Hu, R. Zhang, T. Lai, X. Zhu, H. Zou, and Z. Song, ECS J. Solid State Sci. Technol. 6, 4 (2017).Google Scholar

Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  1. 1.School of Mathematics and PhysicsJiangsu University of TechnologyChangzhouChina
  2. 2.State-Key Laboratory of Optoelectronic Materials and Technology, School of PhysicsSun Yat-Sen UniversityGuangzhouChina
  3. 3.State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhouChina
  4. 4.Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of SemiconductorsChinese Academy of SciencesBeijingChina

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