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Effect of Growth Temperature on Physical Properties of MoS2 Thin Films Synthesized by CVD

  • Mahnoosh Ardahe
  • Mohammad Reza HantehzadehEmail author
  • Mahmood Ghoranneviss
Article
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Abstract

Due to the application of two-dimensional crystals in different fields, high-quality growth of these materials has attracted more attention from researchers. High-quality monolayer MoS2 with single crystals up to 20 microns in size has been formed on Si substrate by the chemical vapor deposition method. A comprehensive study was carried out on the prepared MoS2 thin films using optical microscopy, atomic force microscopy, x-ray diffraction (XRD) analysis, and Raman spectroscopy. It was concluded that the growth temperature affected the morphology and structure of the synthesized MoS2 sheets. The XRD spectra confirmed that the peak intensity and resolution were highly dependent on the growth temperature. Raman spectroscopy showed that monolayer MoS2 was grown on the silicon substrate at higher temperature, as proved by the Raman frequency difference (∼ 19 cm−1) between two characteristic modes (\( {\hbox{E}}^{1}_{{2{\rm{g}}}} \) and A1g). Atomic force micrographs of the films showed the evolution of the surface morphology as a function of the growth temperature.

Keywords

Molybdenum disulfide two-dimensional materials chemical vapor deposition Raman spectra monolayer atomic force microscopy 

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Notes

Acknowledgments

This research work was supported by the Department of Physics Science and Research Branch, Islamic Azad University, Tehran, Iran.

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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  • Mahnoosh Ardahe
    • 1
  • Mohammad Reza Hantehzadeh
    • 1
    Email author
  • Mahmood Ghoranneviss
    • 1
  1. 1.Plasma Physics Research Center, Science and Research BranchIslamic Azad UniversityTehranIran

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