Impedance Spectroscopy of Vanadium Pentoxide Thin Films
- 31 Downloads
V2O5 thin films have been deposited onto an insulating support by radiofrequency (rf) reactive sputtering from a metallic vanadium target at controlled flow rates of argon–oxygen gas mixture. Glancing-incidence x-ray diffraction (GIXD) analysis and scanning electron microscopy (SEM) were used for structural and phase characterization of the obtained materials. The as-sputtered thin films were found to consist of orthorhombic V2O5 phase. Electrical properties were determined by electrochemical impedance spectroscopy (EIS) conducted over the frequency range of 0.1 Hz to 1.4 MHz and temperatures ranging from room temperature (RT) to 773 K. Between RT and 528 K, the recorded impedance spectra were interpreted in terms of an equivalent circuit composed of a resistor and non-Debye constant-phase element (CPE) connected in parallel. In this temperature range, the material exhibited n-type extrinsic conductivity. The activation energy of electrical conductivity was 0.243 ± 0.023 eV. At 528 K, an abrupt change in resistivity was observed, interpreted as a metal–insulator transition (MIT). Above 528 K, the equivalent circuit was composed of a resistor (R) and inductor (L) connected in series, typical of materials exhibiting metallic properties.
KeywordsOxide electronics vanadium pentoxide thin film electrical conductivity metal–insulator transition defect structure
This work was supported by the National Science Centre of the Republic of Poland under Grant No. 2016/23/B/ST8/00163.
This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
- 1.J.B. Goodenough and A. Hammett, in Landolt-Bo¨rnstein Numerical Data and Functional Relationships in Science and Technology, New Series Vol. 17 Semiconductors, eds. O. Madelung, M. Schulz, and H. Weiss (Berlin: Springer, 1984), pp. 167–201 and 446–491 (and references therein –262 items).Google Scholar
- 3.K. Hermann and M. Witko, in The Chemical Physics of Solid Surfaces: Oxide Surfaces, Vol. 1, ed. By D.P. Woodruff (Elsevier, Amsterdam, 2001) (Chapter 4), p. 136.Google Scholar
- 11.P.W. Kruse, Uncooled Thermal Imaging Arrays, Systems, and Applications (Bellingkam: SPIE Press, 2001). Google Scholar
- 12.C. Lamsal, in: Electronic thermoelectric and optical properties of vanadium oxides: VO2, V2O3 and V2O5, Ph.D. New Jersey Institute of Technology and Rutgers the State University of New Jersey 2015, Archives.njit.edu.vol01/etd/2015.022.ptd.Google Scholar
- 16.A.I. Pergament, ISRN Condens. Matter Phys. 2011, 1 (2011)Google Scholar
- 17.K. Schneider, K. Kluczewska, M. Dziubaniuk, and J. Wyrwa, in EYEC Monograph, Warsaw, ed. By M. Nowak (2018), pp. 227–240, ISBN 978-83-936575-5-1.Google Scholar
- 19.R.W.G. Wyckoff, Crystal Structures, 2nd ed., Vol. 2 (New York: Wiley, 1964).Google Scholar
- 22.P. Kofstad, Nonstoichiometry, Diffusion and Electrical Conductivity in Binary Metal Oxides (London: Wiley, 1972).Google Scholar
- 23.K. Schneider, in Proceedings of SPIE (2016), pp. 109-1–109-9.Google Scholar
- 27.T. Wu, C.J. Patridge, S. Banerjee, and G. Sambandamurthy, in APS Meeting, March 15–19 (2010). American Physical Society. Abstract #V16.007.Google Scholar
Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.