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Fabrication of CdS/CdTe Heterostructures by Chemical Synthesis Using a p-Type CdTe Film Grown by Electrodeposition Employing EDTA as Strong Complexing Agent

  • M. Arreguín-Campos
  • K. Gutiérrez Z-B
  • J. G. Quiñones-Galván
  • J. Santos-Cruz
  • S. A. Mayén-Hernández
  • O. Zelaya-Angel
  • M. de la L. Olvera
  • G. Contreras-Puente
  • F. de Moure-FloresEmail author
Article
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Abstract

CdS/CdTe heterostructures were fabricated by chemical techniques. CdS films were deposited by chemical bath deposition on soda-lime/SnO2:F substrates. CdS films were obtained varying the concentration of thiourea and the growth temperature. CdTe films were grown by electrodeposition on SnO2:F/CdS substrates at 80°C, using ethylenediaminetetraacetic acid (EDTA) as strong complexing agent. The cathodic potential was varied from − 0.70 V to − 1.20 V. Raman spectroscopy showed that for a potential of − 1.20 V a CdTe film with high crystalline quality was obtained. The electric characterization through JV measurements, indicates the formation of a n-CdS/p-CdTe junction. These results showed that p-type CdTe films grown by electrodeposition technique using EDTA as strong complexing agent were obtained.

Keywords

CdS/CdTe heterostructures p-type CdTe films chemical synthesis electrodeposition 

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Notes

Acknowledgments

We acknowledge the technical support of Marcela Guerrero and A. García-Sotelo from Physics Department of the CINVESTAV-IPN. The authors acknowledge partial financial support for this work from FOFI-UAQ-2018.

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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  • M. Arreguín-Campos
    • 1
  • K. Gutiérrez Z-B
    • 2
  • J. G. Quiñones-Galván
    • 3
  • J. Santos-Cruz
    • 1
  • S. A. Mayén-Hernández
    • 1
  • O. Zelaya-Angel
    • 4
  • M. de la L. Olvera
    • 5
  • G. Contreras-Puente
    • 2
  • F. de Moure-Flores
    • 1
    Email author
  1. 1.Facultad de Química, MaterialesUniversidad Autónoma de QuerétaroQuerétaroMexico
  2. 2.Escuela Superior de Física y Matemáticas del IPNMexicoMexico
  3. 3.Departamento de Física, Centro Universitario de Ciencias Exactas e IngenieríasUniversidad de GuadalajaraGuadalajaraMexico
  4. 4.Departamento de FísicaCINVESTAV-IPNMexicoMexico
  5. 5.Departamento de Ingeniería Eléctrica, Sección de Estado SólidoCINVESTAV-IPNMexicoMexico

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