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Investigation on Na Acceptor Level in p-Type Na-Doped ZnMgO Thin Films Prepared by Pulsed Laser Deposition

  • Jiyu Huang
  • Cong Chen
  • Haiping HeEmail author
  • Chuhan Sha
  • Zhizhen YeEmail author
Article
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Abstract

Na-doped ZnMgO films have been deposited on quartz substrates by pulsed laser deposition and the effect of the oxygen pressure on their electrical properties investigated. The film deposited under optimal conditions exhibited p-type conductivity with representative hole concentration of 1.2 × 1015 cm−3, Hall mobility of 8.3 cm2 V−1 s−1, and resistivity of 6.7 × 102 Ω cm. Temperature-dependent Hall measurements were used to confirm the p-type conductivity and determine the Na-related acceptor level in the ZnMgO films, which was estimated to be 483 ± 21 meV. Temperature-dependent photoluminescence revealed an acceptor level of about 460 meV, close to the result determined by Hall measurements. The Na acceptor is deeper in ZnMgO than in ZnO due to the enlarged bandgap.

Keywords

ZnMgO film p-type doping acceptor level photoluminescence 

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Notes

Acknowledgements

This work was supported by the National Natural Science Foundation of China under Grant Nos. 91333203 and 51372223, and the Fundamental Research Funds for the Central Universities under Grant No. 2017FZA4007.

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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  1. 1.State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and EngineeringZhejiang UniversityHangzhouPeople’s Republic of China

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