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Journal of Electronic Materials

, Volume 48, Issue 5, pp 3270–3275 | Cite as

Performance Analysis and Investigation of Subthreshold Short-Channel Behavior of a Dual-Material Elliptical Gate-All-Around MOSFET

  • Pritha BanerjeeEmail author
  • Subir Kumar Sarkar
Article
  • 11 Downloads

Abstract

The current investigation encompasses a detailed subthreshold short-channel performance analysis of a structure, namely a dual-material elliptical gate-all-around metal-oxide semiconductor field-effect transistor (DM EGAA MOSFET). This quasi-three-dimensional scaling length-based model features expression of central bottom potential from which parameters like threshold voltage and electric field have also been studied. The extent of immunity of the proposed device towards the different short-channel effects (SCEs) has also been studied. The analytical models are validated using ATLAS simulation data.

Keywords

Short-channel effects elliptical MOSFETs gate-all-around MOSFET subthreshold swing 

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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  1. 1.Department of Electronics and Telecommunication EngineeringJadavpur UniversityKolkataIndia

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