Journal of Electronic Materials

, Volume 48, Issue 5, pp 2950–2954 | Cite as

Pressure Dependence of Sb Level in Dilute Nitride and Antimony GaNxSbyAs1−xy

  • Chuan-Zhen ZhaoEmail author
  • Si-Yu Sun
  • Xiao-Dong Sun
  • Sha-Sha Wang
  • Jun Wang


The pressure dependence of the Sb level is achieved by using the double-band anticrossing model to fit the experimental pressure dependence of the band gap energy of dilute nitride and antimony GaNxSbyAs1−xy alloy. It is found that the pressure coefficient for the Sb level is much larger than that for the N level. The difference of the pressure dependence between the Sb level and the N level is due to two factors. One is the different locations of the Sb level and the N level. The other is that the atomic size mismatch and electronegativity difference between As and Sb atoms are much smaller than those between N and As atoms. In addition, it is found that the N-Γ conduction band's minimum coupling interaction is the major factor to affect the pressure dependence of the band gap energy of GaNxSbyAs1−xy.


GaNxSbyAs1−xy pressure dependence band gap energy Sb level dilute nitride 


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This work is supported by the National Nature Science Foundation of China (61874077, 61504094), Tianjin Research Program of Application Foundation and Advanced Technology (15JCYBJC51900, 17JCQNJC02000).


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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  • Chuan-Zhen Zhao
    • 1
    Email author
  • Si-Yu Sun
    • 1
  • Xiao-Dong Sun
    • 1
  • Sha-Sha Wang
    • 1
  • Jun Wang
    • 1
  1. 1.Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information EngineeringTianjin Polytechnics UniversityTianjinChina

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