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Optical and Ferromagnetic Properties of Ni-Doped CdTeSe Quantum Dots

  • N. X. Ca
  • N. T. Hien
  • P. N. Loan
  • P. M. Tan
  • U. T. D. Thuy
  • T. L. Phan
  • Q. B. NguyenEmail author
Article

Abstract

A chemical method was used to prepare Cd1−xNixTe0.5Se0.5 (Cd1−xNixTeSe, x = 0–0.1) quantum dots (QDs) with particle sizes of 3–4 nm. Structural analyses of x-ray diffraction patterns indicate that all QDs are single-phase and crystallize in the zincblende-type structure. The lattice constant gradually decreases with increasing x in Cd1−xNixTeSe. This is due to a partial replacement of Ni (a smaller ion) for Cd2+ (a larger ion). Our study also indicates that the Ni doping causes the red shift of the longitudinal optical mode, the blue shift of the excitonic absorption edge and photoluminescence (PL) peak, and a gradual decrease of the PL quantum yield. When the excitation power increases, the PL peak of CdTeSe (x = 0) is almost unchanged, while that of Cd1−xNixTeSe QDs (x > 0) shifts linearly towards high energies, which is related to the state-filling effect caused by Ni2+ dopants. Comparing with pure CdTeSe, Ni-doped QDs have longer PL decay times, up to ∼ 580 ns. Particularly, all QDs exhibit weak ferromagnetic (FM) order at room temperature generated from defect-mediated exchange interactions of Ni2+ ions. Such results proved ternary Cd1−xNixTeSe QDs having simultaneously the optical and FM properties. Together with very long decay times, they are considered as potential materials for biosensing, photovoltaic and photocatalytic applications.

Keywords

CdTeSe quantum dots optical and magnetic properties  Ni-doping state filling effect 

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Notes

Acknowledgments

This research is funded by the Vietnam National Foundation for Science and Technology Development (NAFOSTED) under Grant Number 103.02-2017.350.

Supplementary material

11664_2019_7017_MOESM1_ESM.pdf (198 kb)
Supplementary material 1 (PDF 198 kb)

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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  • N. X. Ca
    • 1
  • N. T. Hien
    • 1
  • P. N. Loan
    • 1
  • P. M. Tan
    • 2
  • U. T. D. Thuy
    • 3
  • T. L. Phan
    • 4
  • Q. B. Nguyen
    • 5
    Email author
  1. 1.Faculty of Physics and TechnologyThai Nguyen University of ScienceThai NguyenViet Nam
  2. 2.Faculty of Fundamental SciencesThai Nguyen University of TechnologyThai NguyenViet Nam
  3. 3.Institute of Materials ScienceVietnam Academy of Science and TechnologyHanoiViet Nam
  4. 4.Department of PhysicsHankuk University of Foreign StudiesYonginSouth Korea
  5. 5.Institute of Research and DevelopmentDuy Tan UniversityDa NangViet Nam

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