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Electrical Properties of Metal-Porous GaAs Structure at Water Adsorption

  • Yurii MilovanovEmail author
  • Valeriy Skryshevsky
  • Iryna Gavrilchenko
  • Anatoliy Oksanich
  • Sergiy Pritchin
  • Maksym Kogdas
Article
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Abstract

This paper reports the morphological, optical, luminescent and electrical properties of electrochemically made porous GaAs in order to evaluate their humidity sensing performance. The obtained porous GaAs exhibits non-homogenous surface morphology, which consists of pyramid-shaped crystallites and micropores. Photoluminescent and FTIR study shows that the surface of such material is covered by an oxide of As and Ga. The impedance spectroscopy was applied to analyze the influence of water vapor on electrical properties of metal-porous GaAs. It was shown that water adsorption results in the Nyquist plots shift to the region of higher frequencies. In humid atmosphere resistance Rv and characteristic time of charge accumulation τ are decreased by 1.4 times and 5 times, respectively; resistance Rb and capacity Cb decreased by 1.4 times and 4.4 times, respectively. The response of the metal-porous GaAs structure to the adsorption of water is attributed to the decreasing of the bulk resistivity and potential barrier height. The formed oxide layer on the surface of porous GaAs plays a dual role—it increases the ability to adsorb water molecules and prevents the surface from receiving structural degradation.

Keywords

Porous GaAs SEM DRIFT spectrum impedance spectroscopy Nyquist plot humidity sensor 

Abbreviations

FTIR spectroscopy

Fourier transform infrared spectroscopy

DRIFT spectra

Diffuse reflectance infrared Fourier transform spectra

AFM

Atomic force microscope

SEM

Scanning electron microscope

PL

Photoluminescence

FWHM

Full width at half maximum

CPE

Constant phase element

XPS

X-ray photoelectronic spectroscopy

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Notes

Acknowledgments

The authors wish to thank A. Pastushenko (INSA Lyon) for SEM measurements.

Authors’ Contributions

YM and IG carried out the measurements and calculations. AO and MK fabricated the samples of porous GaAs. VS and SP proposed the idea of the work and analyzed the results. All authors have read and approved the final manuscript.

Conflict of interest

The authors declare that they have no competing interests.

Funding

The results of these studies were obtained without any sources of funding.

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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  1. 1.Institute of High TechnologiesTaras Shevchenko National University of KyivKievUkraine
  2. 2.Kremenchuk Mykhailo Ostrohradskyi National UniversityKremenchukUkraine

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