Abstract
In this work, porous BiVO4 thin films were deposited on the FTO glass through a spin-coating deposition method and their photoelectrochemical (PEC) properties were investigated. Further, the BiVO4 thin film was modified with a NiMoO4 thin layer for enhancing its PEC activity. It is demonstrated that the applied bias photo-to-current conversion efficiency is increased by 63% after a surface modification, which is ascribed to both the formation of a p–n junction and the suppressed carrier recombination rate by terms of the electrochemical impedance spectroscopy. Finally, a schematic band model is also proposed to clarify the charge carrier transfer mechanism which is responsible for the enhanced PEC performance.
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Acknowledgments
This work is financially supported by Postgraduate Research and Practice Program of Education and Teaching Reform of CUMT (No. YJSJG-2018-042).
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Wang, L., Jia, S., Gu, X. et al. Enhanced Photoelectrochemical Performance of BiVO4 by a NiMoO4 Modification. J. Electron. Mater. 48, 2501–2508 (2019). https://doi.org/10.1007/s11664-019-07002-2
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DOI: https://doi.org/10.1007/s11664-019-07002-2