Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry
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Abstract
Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (ε = ε1 + iε2) and refractive index (N = n + ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2 eV to 6.2 eV at 300 K. From the analyses of second-energy derivatives of ε1 and ε2, interband transition energies (critical points) were determined. Absorption coefficient–photon energy dependency allowed us to achieve a band gap energy of 2.02 eV. Wemple and DiDomenico single effective oscillator and Spitzer–Fan models were accomplished and various optical parameters of the crystal were reported in the present work.
Keywords
Semiconductors optical properties optical constants critical pointsPreview
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