Prospects of Impact Avalanche Transit-Time Diode Based on Chemical-Vapor-Deposited Diamond Substrate
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We propose a chemical-vapor-deposited (CVD) diamond-based double-drift-region (DDR) impact avalanche transit-time diode (IMPATT) for use in microwave applications. CVD diamond is taken as the base substrate material. Simulations were carried out to perform direct-current (DC), small-signal, and noise analyses on the IMPATT. The results are in agreement with experimental reports. The IMPATT based on CVD diamond offers better performance compared with other materials reported to date at 26 GHz to 40 GHz. In the near future, this device could represent the best alternative for designers and semiconductor industry, due to its numerous advantages including higher DC-to-radiofrequency (RF) conversion efficiency (27.81%), highest power density (6.206 × 109 W m−2), minimum noise value (− 98.22 dBm), and best optimized conductance–susceptance profile with lower quality factor (0.0215).
KeywordsCVD diamond DDR IMPATT impact ionization conversion efficiency noise measure power density
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This work was supported by the Department of Electronics and Communication Engineering, Visvesvaraya National Institute of Technology, Nagpur, India. The authors are grateful to MHRD, Govt. of India for providing research assistantship to G.C.G. and also thank Monojit Mitra, Professor of Electronics and Telecommunication Engineering Department, IIEST, Shibpur for necessary technical discussion and encouragement to do this work.
Conflict of interest
The authors declare that they have no conflicts of interest.
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