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Journal of Electronic Materials

, Volume 47, Issue 9, pp 5113–5117 | Cite as

Generation and Auto-Revealing of Dislocations in Si During Macropore Etching

  • K. P. Konin
  • O. Yo. Gudymenko
  • V. P. Klad’ko
  • O. O. Lytvynenko
  • D. V. Morozovs’ka
Topical Collection: 17th Conference on Defects (DRIP XVII)
  • 17 Downloads
Part of the following topical collections:
  1. 17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII)

Abstract

The influence of the variations in the photoelectrochemical etching regimes of macropores in n-Si (within the limits of V. Lehmann optimums) on the quality of structures was studied. At some regimes, generation of screw (cylindrical or spiral) dislocations during the etching process under normal conditions was observed. First, dislocations are formed, and then macropores are etched, mainly on near-surface traces of dislocations. We call this process “auto-revealing”. The values of residual lattice distortions due to deformation of the silicon plate during the etching process were determined by x-ray diffraction on a structure obtained in the acceptable boundary regime.

Keywords

Macroporous silicon macropores etching x-ray diffraction, XRD defects in semiconductors 

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Notes

Acknowledgements

The authors are grateful to O. Stronska for her assistance in the preparation of the article.

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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  1. 1.V. Lashkaryov Institute of Semiconductor PhysicsNational Academy of Science of UkraineKievUkraine

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