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Journal of Electronic Materials

, Volume 47, Issue 10, pp 6086–6090 | Cite as

Effect of Metal Contacts on a GaN/Sapphire-Based MSM Ultraviolet Photodetector

  • Shubhendra K. Jain
  • Shibin Krishna
  • Neha Aggarwal
  • Rahul Kumar
  • Abhiram Gundimeda
  • Sudhir C. Husale
  • Vinay Gupta
  • Govind Gupta
Article
  • 36 Downloads

Abstract

We report the fabrication of a GaN/sapphire ultraviolet (UV) photodetector (PD) with asymmetric (Pt-Ag) and symmetric (Pt-Pt) metal–semiconductor–metal (MSM) structure. The fabricated devices display Schottky behavior. Time-dependent photoresponse analysis reveals a significant enhancement in photocurrent leading to a photoresponsivity of 37 mA/W and 267 mA/W under 13 mW optical power at 5 V bias for Pt-Pt and Pt-Ag devices, respectively. Further, power-dependent measurements reveal a peak responsivity of 633 mA/W at 4mW optical power and 5 V bias for the Pt-Ag asymmetric MSM photodetector. The significant enhancement in responsivity for asymmetric MSM UV PD is ascribed to the built-in potential gradient in the GaN semiconductor, which drives a large number of charge carriers for enhanced charge collection. Further, the noise equivalent power was lowest for the Pt-Ag MSM structure, which was calculated to be 4.6 × 10−14 WHz−1/2. This high performance asymmetric MSM GaN UV PD can be integrated into efficient UV PD-based applications.

Keywords

GaN ultraviolet photodetector metal–semiconductor–metal structure 

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Notes

Acknowledgments

Authors would like to acknowledge the director, CSIR-NPL for his encouragement. SKJ is thankful to CSIR for NET-JRF/SRF fellowship. This work is financially supported by the Department of Science and Technology (Govt. of India) under Grant aid DST-GAP-160732.

Funding

Funding was provided by Science and Engineering Research Board (DST/TM/CERI/C245(G)).

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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  • Shubhendra K. Jain
    • 1
    • 4
  • Shibin Krishna
    • 1
    • 4
  • Neha Aggarwal
    • 1
    • 4
  • Rahul Kumar
    • 2
    • 4
  • Abhiram Gundimeda
    • 1
    • 4
  • Sudhir C. Husale
    • 2
  • Vinay Gupta
    • 3
  • Govind Gupta
    • 1
    • 4
  1. 1.Advance Material and Devices DivisionCSIR-National Physical Laboratory (CSIR-NPL)New DelhiIndia
  2. 2.Quantum Phenomena and ApplicationsCSIR-NPLNew DelhiIndia
  3. 3.Department of Physics and AstrophysicsUniversity of DelhiNew DelhiIndia
  4. 4.Academy of Science and Innovative Research (AcSIR)New DelhiIndia

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