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Journal of Electronic Materials

, Volume 47, Issue 9, pp 5259–5268 | Cite as

The Role of the Substrate on Photophysical Properties of Highly Ordered 15R-SiC Thin Films

  • Satyendra Mourya
  • Jyoti Jaiswal
  • Gaurav Malik
  • Brijesh Kumar
  • Ramesh ChandraEmail author
Article

Abstract

We report on the structural optimization and photophysical properties of in situ RF-sputtered single crystalline 15R-SiC thin films deposited on various substrates (ZrO2, MgO, SiC, and Si). The role of the substrates on the structural, electronic, and photodynamic behavior of the grown films have been demonstrated using x-ray diffraction, photoluminescence (PL) and time-resolved photoluminescence spectroscopy. The appropriate bonding order and the presence of native oxide on the surface of the grown samples are confirmed by x-ray photoelectron spectroscopy measurement. A deep-blue PL emission has been observed corresponding to the Si-centered defects occurring in the native oxide. Deconvolution of the PL spectra manifested two decay mechanisms corresponding to the radiative recombination. The PL intensity and carrier lifetime were found to be substrate- dependent which may be ascribed to the variation in the trap-density of the films grown on different substrates.

Keywords

Silicon carbide sputtering XPS photoluminescence time-resolved photoluminescence 

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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  • Satyendra Mourya
    • 1
    • 2
  • Jyoti Jaiswal
    • 1
  • Gaurav Malik
    • 1
  • Brijesh Kumar
    • 2
  • Ramesh Chandra
    • 1
    Email author
  1. 1.Thin film LaboratoryInstitute Instrumentation Centre, Indian Institute of Technology RoorkeeRoorkeeIndia
  2. 2.Department of Electronics and Communication EngineeringIndian Institute of Technology RoorkeeRoorkeeIndia

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