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Journal of Electronic Materials

, Volume 47, Issue 8, pp 4508–4514 | Cite as

Electronic and Optical Properties of Atomic Layer-Deposited ZnO and TiO2

  • H. Ates
  • S. Bolat
  • F. Oruc
  • A. K. Okyay
Topical Collection: Electronic Materials for Renewable Energy Applications
  • 92 Downloads
Part of the following topical collections:
  1. 5th European Conference on Renewable Energy Systems

Abstract

Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.

Keywords

Zinc oxide titanium oxide atomic layer deposition thin film transistor semiconductor 

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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  1. 1.Department of Metallurgical and Materials Engineering, Faculty of TechnologyGazi UniversityAnkaraTurkey
  2. 2.Department of Electrical and Electronics Engineering, UNAM - National Nanotechnology Research CenterBilkent UniversityAnkaraTurkey
  3. 3.Okyay Tech.YenimahalleTurkey

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